Volume 33 Issue 8
Aug.  2021
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Zhang Yaofeng, Yin Yuan, Cao Lei, et al. Simulations of ion trap devices based on finite element analysis method[J]. High Power Laser and Particle Beams, 2021, 33: 086002. doi: 10.11884/HPLPB202133.210134
Citation: Zhang Yaofeng, Yin Yuan, Cao Lei, et al. Simulations of ion trap devices based on finite element analysis method[J]. High Power Laser and Particle Beams, 2021, 33: 086002. doi: 10.11884/HPLPB202133.210134

Simulations of ion trap devices based on finite element analysis method

doi: 10.11884/HPLPB202133.210134
  • Received Date: 2021-04-07
  • Rev Recd Date: 2021-06-29
  • Available Online: 2021-07-22
  • Publish Date: 2021-08-15
  • Using the constructed electric field trap, Penning ion trap devices can constrain ions and are already applied in some research fields such as nuclear physics in which the mass of ions can be measured exactly and quantum computing in which the Penning traps can be a tool to story quantum bits. ANSYS, a finite element analysis (FEA) program, was employed to do the electric field calculations for Penning traps. And then, with the electric field from FEA program, we used the method of Runge_Kutta_Fehlberg to do simulations for the ion trapping process, and finally got the accurate results of ion tracking. Additionally, we carried out tracking simulations for practical traps which have ring electrodes with shapes different from the ideal Penning traps, and achieved similar simulation results. The way of the electric field calculation by FEA method, and the workflow for ion tracking will help a lot to build and run Penning traps and similar devices.
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