Three-dimensional Monte Carlo simulation of electron radiation effects on CCD

Tan Qun; Fan Jieqing; Zhao Qiang; Zhang Fang; Li Yao; Hao Jianhong; Dong Zhiwei

doi:10.11884/HPLPB202234.210390

Volume 34 Issue 4

Mar. 2022

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Article Navigation > High Power Laser and Particle Beams > 2022 > 34(4): 044004

Tan Qun, Fan Jieqing, Zhao Qiang, et al. Three-dimensional Monte Carlo simulation of electron radiation effects on CCD[J]. High Power Laser and Particle Beams, 2022, 34: 044004. doi: 10.11884/HPLPB202234.210390

Citation:

Tan Qun, Fan Jieqing, Zhao Qiang, et al. Three-dimensional Monte Carlo simulation of electron radiation effects on CCD[J]. High Power Laser and Particle Beams, 2022, 34: 044004. doi: 10.11884/HPLPB202234.210390

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Three-dimensional Monte Carlo simulation of electron radiation effects on CCD

doi: 10.11884/HPLPB202234.210390

Tan Qun^{1, 2
,},
Fan Jieqing¹,
Zhao Qiang^{2
,
,},
Zhang Fang²,
Li Yao^{1, 2},
Hao Jianhong¹,
Dong Zhiwei²

1.
School of Electrical and Electronics Engineering, North China Electric Power University, Beijing 102206, China
2.
Institute of Applied Physics and Computational Mathematics, Beijing 100094, China

Received Date: 2021-09-01
Accepted Date: 2021-12-02
Rev Recd Date: 2021-11-24

Available Online: 2021-12-09

Publish Date: 2022-03-19

Abstract

Abstract

As a key component, CCD has been widely used in space-based CCD cameras. However, it is vulnerable to the impact of high-energy electron radiation in space environment, resulting in performance degradation and abnormal operation. For this problem, a domestic N-channel three-phase polysilicon CCD with an overlapping gate and frame-transfer structure is selected to study the effect of electron irradiation. The models were established by FLUKA for Si and SiO₂ irradiated with electrons, which are the composition material of CCD. We simulated the physical process of electrons and material interaction and calculated the total mass stopping power and range of different energy electron beams in Si and SiO₂, then compared them with the theoretical results, and the correctness of the simulation method is verfied. A three-dimensional model of CCD pixel array was established. The effects of electron irradiation with different energy on the energy deposition process of electrons in CCD and the effect of between pixels on DPA (Displacement Per Atom) of electrons in CCD pixels were simulated and calculated. The mechanism of radiation damage difference is analyzed respectively.
- CCD,
- electron irradiation,
- FLUKA,
- stopping power,
- range,
- energy deposition,
- displacement per atom

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References(17)

References

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