Damage morphology of GaAs photoconductive switch

Sha Huiru; Xiao Longfei; Luan Chongbiao; Feng Zhuoyun; Li Yangfan; Sun Xun; Hu Xiaobo; Xu Xiangang

doi:10.11884/HPLPB202234.210579

Volume 34 Issue 9

Jun. 2022

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Sha Huiru, Xiao Longfei, Luan Chongbiao, et al. Damage morphology of GaAs photoconductive switch[J]. High Power Laser and Particle Beams, 2022, 34: 095018. doi: 10.11884/HPLPB202234.210579

Citation:

Sha Huiru, Xiao Longfei, Luan Chongbiao, et al. Damage morphology of GaAs photoconductive switch[J]. High Power Laser and Particle Beams, 2022, 34: 095018. doi: 10.11884/HPLPB202234.210579

Sha Huiru, Xiao Longfei, Luan Chongbiao, et al. Damage morphology of GaAs photoconductive switch[J]. High Power Laser and Particle Beams, 2022, 34: 095018. doi: 10.11884/HPLPB202234.210579

Citation:

Sha Huiru, Xiao Longfei, Luan Chongbiao, et al. Damage morphology of GaAs photoconductive switch[J]. High Power Laser and Particle Beams, 2022, 34: 095018. doi: 10.11884/HPLPB202234.210579

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Damage morphology of GaAs photoconductive switch

doi: 10.11884/HPLPB202234.210579

Sha Huiru^{1, 2
,},
Xiao Longfei^{1, 2
,
,},
Luan Chongbiao³,
Feng Zhuoyun^{1, 2, 3},
Li Yangfan^{1, 2},
Sun Xun^{1, 2},
Hu Xiaobo^{1, 2},
Xu Xiangang^{1, 2}

1.
Institute of Noval Semiconduction, Shandong University, Jinan 250100, China
2.
State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
3.
Institute of Fluid Physics, CAEP, Mianyang 621900, China

Received Date: 2021-12-30
Rev Recd Date: 2022-04-12

Available Online: 2022-04-18

Publish Date: 2022-06-17

Abstract

Abstract

A lateral GaAs photoconductive switch was fabricated and its conduction performance was tested. To study device damage in long-term working environment, the switch is studied operating at 8 kV, 10 Hz triggering frequency and 10 mJ triggering energy for 10⁴ times. By means of confocal laser scanning microscopy, the damage morphology of the electrode edge and between the electrodes are analyzed. It is found that the thermal damage of the anode edge was caused by thermal accumulation, and the damage of the cathode edge was caused by thermal stress. The damage morphology between electrodes is characterized and classified in detail.
- photoconductive semiconductor switch,
- gallium arsenide,
- damage,
- morphology,
- heat effect

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References(23)

References

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