Volume 36 Issue 2
Jan.  2024
Turn off MathJax
Article Contents
Li Zhiheng, Ma Shaoxiang, Zhang Hongqi, et al. Parameter optimization design of snubber circuit for high voltage protection switch[J]. High Power Laser and Particle Beams, 2024, 36: 025009. doi: 10.11884/HPLPB202436.230158
Citation: Li Zhiheng, Ma Shaoxiang, Zhang Hongqi, et al. Parameter optimization design of snubber circuit for high voltage protection switch[J]. High Power Laser and Particle Beams, 2024, 36: 025009. doi: 10.11884/HPLPB202436.230158

Parameter optimization design of snubber circuit for high voltage protection switch

doi: 10.11884/HPLPB202436.230158
  • Received Date: 2023-05-30
  • Accepted Date: 2023-09-19
  • Rev Recd Date: 2023-09-07
  • Available Online: 2023-11-09
  • Publish Date: 2024-01-12
  • The ion source and electron gyrotron of the fusion auxiliary heating system are prone to failure and expensive. To protect them, it is necessary to study the high voltage switch scheme. The parameter design methods of high voltage protection switch snubber circuit are lack of relevant theoretical design methods currently, and the snubber circuit schemes are isoparametric design schemes because the influence of distributed capacitance is not taken into account in the design process. The voltage-balancing effect of this method is not ideal. To solve the problems existing in the current parameter design, we have established the MOSFET model with snubber circuit and stray inductor and analyze its turn-off process, thus to obtain the theoretical design method and expression of snubber circuit for suppressing voltage spike. Taking the distributed capacitance into consideration in series voltage-balancing and constructing the isoelectric point, we have established and analyzed the equivalent circuit, and obtained the non-equal parameter design method and expression of snubber circuit according to the charge equation. This parameter design method can compensate the uneven voltage distribution caused by distributed capacitance and guide the voltage-balancing scheme design of high voltage protection switch better. To verify the rationality of the parameter design, we have a carried out, simulation analysis. which shows that the overall design scheme can meet the design requirements of peak suppression and voltage-balancing.
  • loading
  • [1]
    章雪亮. 聚变装置辅助加热系统逆变型直流高压电源技术研究[D]. 武汉: 华中科技大学, 2016

    Zhang Xueliang. Research on the technology of inverter type DC high voltage power supply for auxiliary heating system of fusion device[D]. Wuhan: Huazhong University of Science & Technology, 2016
    [2]
    Watanabe K, Kashiwagi M, Kawashima S, et al. Development of a dc 1 MV power supply technology for NB injectors[J]. Nuclear Fusion, 2006, 46(6): S332-S339. doi: 10.1088/0029-5515/46/6/S15
    [3]
    余振雄. J-TEXT装置ECRH控制系统研究[D]. 武汉: 华中科技大学, 2017

    Yu Zhenxiong. Research of electron cyclotron resonance heating control system on J-TEXT[D]. Wuhan: Huazhong University of Science and Technology, 2017
    [4]
    Zhang Ming, Wang Dongyu, Ma Shaoxiang, et al. A novel series switch module in high-voltage applications[J]. Fusion Engineering and Design, 2019, 146: 2618-2623. doi: 10.1016/j.fusengdes.2019.04.057
    [5]
    Abbate C, Busatto G, Iannuzzo F. High-voltage, high-performance switch using series-connected IGBTs[J]. IEEE Transactions on Power Electronics, 2010, 25(9): 2450-2459. doi: 10.1109/TPEL.2010.2049272
    [6]
    Podlesak T F, Carter J L, McMurray J A. Demonstration of compact solid-state opening and closing switch utilizing GTOs in series[J]. IEEE Transactions on Electron Devices, 1991, 38(4): 706-711. doi: 10.1109/16.75193
    [7]
    Consoli A, Musumeci S, Oriti G, et al. Active voltage balancement of series connected IGBTs[C]//Proceedings of the Conference Record of the 1995 IEEE Industry Applications Conference Thirtieth IAS Annual Meeting. 1995: 2754-2758.
    [8]
    Renz G, Holzschuh F, Zeyfang E. PFNs switched with stacked SCRs at 20 kV, 500 J, and 100 Hz REP-rate[C]//Proceedings of the 11th IEEE International Pulsed Power Conference. 1997: 390-395.
    [9]
    Welleman A, Fleischmann W, Kaesler W. Solid state on-off pulse switches using IGCT technology[C]//Proceedings of the IEEE 34th International Conference on Plasma Science. 2007: 1025-1028.
    [10]
    Dongye Zhonghao, Qi Lei, Cui Xiang, et al. A new approach to model reverse recovery process of a thyristor for HVdc circuit breaker testing[J]. IEEE Transactions on Power Electronics, 2021, 36(2): 1591-1601. doi: 10.1109/TPEL.2020.3007660
    [11]
    Luo Yifei, Xiao Fei, Liu Binli, et al. A physics-based transient electrothermal model of high-voltage press-pack IGBTs under HVdc interruption[J]. IEEE Transactions on Power Electronics, 2020, 35(6): 5660-5669. doi: 10.1109/TPEL.2019.2948936
    [12]
    Xiao Huangqing, Xu Zheng, Xiao Liang, et al. Components sharing based integrated HVDC circuit breaker for meshed HVDC grids[J]. IEEE Transactions on Power Delivery, 2020, 35(4): 1856-1866. doi: 10.1109/TPWRD.2019.2955726
    [13]
    Wang Dongyu, Zhang Ming, Ma Shaoxiang, et al. A high-voltage solid-state switch based on submodule topology of SiC MOSFETs for J-TEXT tokamak[J]. IEEE Transactions on Plasma Science, 2020, 48(6): 1676-1680. doi: 10.1109/TPS.2019.2959623
    [14]
    Ma Shaoxiang, Shang Wentong, Wang Dongyu, et al. A reliable voltage clamping submodule based on SiC MOSFET for solid state switch[J]. Review of Scientific Instruments, 2021, 92: 024713. doi: 10.1063/5.0027135
    [15]
    Lu Ting, Zhao Zhengming, Ji Shiqi, et al. Active clamping circuit with status feedback for series-connected HV-IGBTs[J]. IEEE Transactions on Industry Applications, 2014, 50(5): 3579-3590. doi: 10.1109/TIA.2014.2308356
    [16]
    Ji Shiqi, Lu Ting, Zhao Zhengming, et al. Series-connected HV-IGBTs using active voltage balancing control with status feedback circuit[J]. IEEE Transactions on Power Electronics, 2015, 30(8): 4165-4174. doi: 10.1109/TPEL.2014.2360189
    [17]
    Zarghani M, Mohsenzade S, Kaboli S. A fast and series-stacked IGBT switch with balanced voltage sharing for pulsed power applications[J]. IEEE Transactions on Plasma Science, 2016, 44(10): 2013-2021. doi: 10.1109/TPS.2016.2574126
  • 加载中

Catalog

    通讯作者: 陈斌, bchen63@163.com
    • 1. 

      沈阳化工大学材料科学与工程学院 沈阳 110142

    1. 本站搜索
    2. 百度学术搜索
    3. 万方数据库搜索
    4. CNKI搜索

    Figures(16)  / Tables(2)

    Article views (295) PDF downloads(90) Cited by()
    Proportional views
    Related

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return