Design of MOSFET gate driver circuit with negative voltage stability

Yin Yakun; Duan Zhangchao; Wang Yonggang; Jiang Song; Li Zi

doi:10.11884/HPLPB202436.240047

Volume 36 Issue 8

Jul. 2024

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Yin Yakun, Duan Zhangchao, Wang Yonggang, et al. Design of MOSFET gate driver circuit with negative voltage stability[J]. High Power Laser and Particle Beams, 2024, 36: 085002. doi: 10.11884/HPLPB202436.240047

Citation:

Yin Yakun, Duan Zhangchao, Wang Yonggang, et al. Design of MOSFET gate driver circuit with negative voltage stability[J]. High Power Laser and Particle Beams, 2024, 36: 085002. doi: 10.11884/HPLPB202436.240047

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Design of MOSFET gate driver circuit with negative voltage stability

doi: 10.11884/HPLPB202436.240047

1.
School of Mechanical Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
2.
Panjiakou Energy Storage Power Plant, State Grid Xinyuan Holdings Co., Ltd., Tangshan 064309, China

Received Date: 2024-02-01
Accepted Date: 2024-05-30
Rev Recd Date: 2024-05-30

Available Online: 2024-06-04

Publish Date: 2024-07-04

Abstract

Abstract

A drive circuit for solid-state high-voltage Marx pulser generator is designed, and the output side of the drive circuit adopts energy storage capacitor and P-N-MOS structure, which can complete the synchronization, fast turning on and turnin off control of the power MOSFET in the power circuit of the solid-state pulse generator, and has the functions of dead-time adjustment and negative voltage bias. In addition, the drive circuit is combined with the scheme of reverse wiring on the secondary side of the core-piercing magnetic ring to realize the control of two power MOSFETs of charging and discharging in the power loop using the same signal. Experiments show that the solid-state Marx pulse generator using this drive circuit can output a pulse square wave with a stable amplitude of 24 kV, and the output pulse width can be freely adjusted between 300 ns and 10 μs, and the rising and falling edges are within 40 ns.
- solid-state Marx driving circuit,
- negative voltage bias,
- fast turn-on,
- nanosecond pulse

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References

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