Technology and application of the voltage-controlled pulse power semiconductor devices

Sun Ruize; Chen Wanjun; Liu Chao; Liu Honghua; Yao Hongmei; Zhang Bo

doi:10.11884/HPLPB202436.240120

Volume 36 Issue 9

Aug. 2024

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Sun Ruize, Chen Wanjun, Liu Chao, et al. Technology and application of the voltage-controlled pulse power semiconductor devices[J]. High Power Laser and Particle Beams, 2024, 36: 095001. doi: 10.11884/HPLPB202436.240120

Citation:

Sun Ruize, Chen Wanjun, Liu Chao, et al. Technology and application of the voltage-controlled pulse power semiconductor devices[J]. High Power Laser and Particle Beams, 2024, 36: 095001. doi: 10.11884/HPLPB202436.240120

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Technology and application of the voltage-controlled pulse power semiconductor devices

doi: 10.11884/HPLPB202436.240120

1.
School of Integrated Circuits Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
2.
Honglin Company of China Aerospace Sanjiang Group, Xiaogan 432000, China
3.
Chengdu ZDHC Limited, Chengdu 610095, China

Received Date: 2024-04-11
Accepted Date: 2024-07-18
Rev Recd Date: 2024-07-18

Available Online: 2024-07-24

Publish Date: 2024-08-16

Abstract

Abstract

Pulse power technology compresses low-power energy in the time domain to achieve high-power output in extremely short durations. In recent years, the trend in pulse power technology has been replacing traditional gas or vacuum switches with a new generation of semiconductor switches. To promote the technical development in the field of pulse power semiconductor devices, this article briefly introduces the development history of voltage-controlled pulse power semiconductor devices and the structure of MOS-controlled thyristors (MCTs). By comparing the pulse performance of MCT with that of commercial IGBT, it illustrates the advantages of high pulse current peak and high di/dt pulse of MCT under the same conditions. However, the conventional MCT cannot be turned off at zero gate voltage, and the carrier injection efficiency and conduction speed need to be further improved. To solve the shortcomings of conventional MCT that can not be turned off under zero voltage, this article then summarizes the research progress in device design, technology, and reliability of MCT. It also demonstrates the advantages of MCT devices in typical application scenarios and provides a brief analysis of the development trends of voltage-controlled pulse power semiconductor devices.
- pulse power technology,
- pulse power semiconductor switch,
- MOS-controlled thyristor,
- voltage-controlled,
- repetitive pulse

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References(17)

References

[1]	江伟华. 高重复频率脉冲功率技术及其应用: (1)概述[J]. 强激光与粒子束, 2012, 24(1):10-15 doi: 10.3788/HPLPB20122401.0010 Jiang Weihua. Repetition rate pulsed power technology and its applications: (i) Introduction[J]. High Power Laser and Particle Beams, 2012, 24(1): 10-15 doi: 10.3788/HPLPB20122401.0010
[2]	Baliga B J, Chang H R. The MOS depletion-mode thyristor: a new MOS-controlled bipolar power device[J]. IEEE Electron Device Letters, 1988, 9(8): 411-413. doi: 10.1109/55.761
[3]	Chen Wanjun, Liu Chao, Tang Xuefeng, et al. High peak current MOS gate-triggered thyristor with fast turn-on characteristics for solid-state closing switch applications[J]. IEEE Electron Device Letters, 2016, 37(2): 205-208. doi: 10.1109/LED.2015.2511182
[4]	Chen Wanjun, Liu Chao, Tang Xuefeng, et al. Experimentally demonstrate a cathode short MOS-controlled thyristor (CS-MCT) for single or repetitive pulse applications[C]//2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD). 2016: 311-314.
[5]	Chen Wanjun, Liu Chao, Shi Yijun, et al. Design and characterization of high di/dt CS-MCT for pulse power applications[J]. IEEE Transactions on Electron Devices, 2017, 64(10): 4206-4212. doi: 10.1109/TED.2017.2736529
[6]	Liu Chao, Chen Wanjun, Sun Ruize, et al. High voltage insulated gate trigger thyristor with high-efficiency injection for fast turn-on and high current pulse[J]. IEEE Electron Device Letters, 2019, 40(12): 1965-1968. doi: 10.1109/LED.2019.2945335
[7]	Liu Chao, Chen Wanjun, Shi Yijun, et al. A novel insulated gate triggered thyristor with Schottky barrier for improved repetitive pulse life and high-di/dt characteristics[J]. IEEE Transactions on Electron Devices, 2019, 66(2): 1018-1025. doi: 10.1109/TED.2018.2887137
[8]	Shinohe T, Nakagawa A, Minami Y, et al. Ultra-high di/dt 2500 V MOS assisted gate-triggered thyristors (MAGTs) for high repetition excimer laser system[C]//International Technical Digest on Electron Devices Meeting. 1989: 301-304.
[9]	Shinohe T, Minami Y, Sato S, et al. Device parameter analysis for direct replacement of thyratrons with MAGTs[C]//Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs. 1993: 77-81.
[10]	Sakugawa T, Kouno K, Kawamoto K, et al. High repetition rate pulsed power generator using IGBTs and magnetic pulse compression circuit[C]//2009 IEEE Pulsed Power Conference. 2009: 394-398.
[11]	Bayne S B, Portnoy W M, Hefner A R. MOS-gated thyristors (MCTs) for repetitive high power switching[J]. IEEE Transactions on Power Electronics, 2001, 16(1): 125-131. doi: 10.1109/63.903997
[12]	陈楠, 陈万军, 尚建蓉, 等. 基于新型绝缘栅触发晶闸管的高功率准矩形脉冲源[J]. 电子与封装, 2021, 21:120302 Chen Nan, Chen Wanjun, Shang Jianrong, et al. High-power quasi-rectangular pulse generation based on a novel insulated gate trigger thyristor[J]. Electronics & Packaging, 2021, 21: 120302
[13]	Xu Xiaorui, Chen Wanjun, Tao Hong, et al. Design and experimental verification of an efficient SSCB based on CS-MCT[J]. IEEE Transactions on Power Electronics, 2020, 35(11): 11682-11693. doi: 10.1109/TPEL.2020.2987418
[14]	Xu Xiaorui, Chen Wanjun, Zhang Shuyi, et al. Design of an isolated circuit breaker with robust interruption capability for DC microgrid protection[J]. IEEE Transactions on Industrial Electronics, 2021, 68(12): 12408-12417. doi: 10.1109/TIE.2020.3039210
[15]	Xu Xiaorui, Chen Wanjun, Liu Chao, et al. An efficient and reliable solid-state circuit breaker based on mixture device[J]. IEEE Transactions on Power Electronics, 2021, 36(9): 9767-9771. doi: 10.1109/TPEL.2021.3067316
[16]	Song Xiaoqing, Cairoli P, Du Yu, et al. A review of thyristor based DC solid-state circuit breakers[J]. IEEE Open Journal of Power Electronics, 2021, 2: 659-672. doi: 10.1109/OJPEL.2021.3134640
[17]	Song Xiaoqing, Huang A Q, Lee M, et al. 22 kV SiC Emitter turn-off (ETO) thyristor and its dynamic performance including SOA[C]//2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC’s (ISPSD). 2015: 277-280.