Analysis of factors causing waveform oscillation in avalanche transistor-based Marx circuit

Zhao Wei; Hu Xueyi; Chen Yuqing; Cheng Zhenbo; Yan Youjie

doi:10.11884/HPLPB202436.240330

Volume 36 Issue 11

Nov. 2024

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Zhao Wei, Hu Xueyi, Chen Yuqing, et al. Analysis of factors causing waveform oscillation in avalanche transistor-based Marx circuit[J]. High Power Laser and Particle Beams, 2024, 36: 115024. doi: 10.11884/HPLPB202436.240330

Citation:

Zhao Wei, Hu Xueyi, Chen Yuqing, et al. Analysis of factors causing waveform oscillation in avalanche transistor-based Marx circuit[J]. High Power Laser and Particle Beams, 2024, 36: 115024. doi: 10.11884/HPLPB202436.240330

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Analysis of factors causing waveform oscillation in avalanche transistor-based Marx circuit

doi: 10.11884/HPLPB202436.240330

Unit 63660 of PLA, Luoyang 471000, China

Received Date: 2024-09-14
Accepted Date: 2024-10-14
Rev Recd Date: 2024-10-14

Available Online: 2024-10-22

Publish Date: 2024-11-01

Abstract

Abstract

The avalanche transistor-based Marx circuit is often used to generate high-voltage nanosecond pulses, its output waveform usually has a rising time about hundreds of picoseconds, an exponential discharging falling edge, and an output voltage in kV-level. However, the typical output waveform falling edge of this circuit structure usually has oscillation or distortion. Meanwhile, as long as the main capacitance of Marx circuit is large enough, the spike oscillation would emerge in the rising edge of the output waveform. Previous studies have paid less attention to this or attributed it to the influence of circuit stray parameters and impedance matching. In this paper, the simulation analysis was carried out from the perspective of the dynamic switching process of the avalanche transistor, and the influences of the main capacitor, the number of Marx circuit stages and the charging voltage were studied experimentally. The results show that the operating state of the avalanche transistor in voltage ramp mode caused the waveform oscillation. The oscillation would be more obvious when the circuit has larger main capacitance, fewer Marx stages and lower charging voltage. Moreover, the amplitude of the pulse oscillation could even be higher than the fast front edge, at this time, the fast front edge could be regarded as the spike oscillation in the output waveform rising edge. The output waveform oscillation can be reduced by adjusting the main capacitance of Marx circuit and optimizing the structure of microstrip line.
- avalanche transistor,
- Marx circuit,
- oscillation and distortion,
- avalanche breakdown,
- nanosecond pulse

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References(22)

References

[1]	赵政, 钟旭, 李征, 等. 基于雪崩三极管的高重频高压纳秒脉冲产生方法综述[J]. 电工技术学报, 2017, 32(8):33-47,54 Zhao Zheng, Zhong Xu, Li Zheng, et al. Review on the methods of generating high-repetitive-frequency high-voltage nanosecond pulses based on avalanche transistors[J]. Transactions of China Electrotechnical Society, 2017, 32(8): 33-47,54
[2]	梁琳, 颜小雪, 黄鑫远, 等. 半导体脉冲功率开关器件综述[J]. 中国电机工程学报, 2022, 42(23):8631-8651 Liang Lin, Yan Xiaoxue, Huang Xinyuan, et al. Review on semiconductor pulsed power switching devices[J]. Proceedings of the CSEE, 2022, 42(23): 8631-8651
[3]	Glover S F, Zutavern F J, Swalby M E, et al. Pulsed- and DC-charged PCSS-based trigger generators[J]. IEEE Transactions on Plasma Science, 2010, 38(10): 2701-2707. doi: 10.1109/TPS.2010.2049662
[4]	Gao Mingxiang, Xie Yanzhao, Wang Shaofei, et al. A portable ultrawideband electromagnetic radiator with a 1.4 MW/50 kHz solid-state subnanosecond pulser[J]. Review of Scientific Instruments, 2019, 90: 066102. doi: 10.1063/1.5094221
[5]	郭宝平, 牛憨笨. 雪崩晶体管的导通方式讨论[J]. 高速摄影与光子学, 1990, 19(4):386-390 Guo Baoping, Niu Hanben. Avalanche transistor trigger modes[J]. High Speed Photography and Photonics, 1990, 19(4): 386-390
[6]	Gao Mingxiang, Xie Yanzhao, Li Kejie, et al. Traveling-wave Marx circuit for generating repetitive sub-nanosecond pulses[J]. IEEE Transactions on Electromagnetic Compatibility, 2019, 61(4): 1271-1279. doi: 10.1109/TEMC.2019.2920508
[7]	袁雪林, 丁臻捷, 俞建国, 等. 基于雪崩管Marx电路的高稳定度脉冲技术[J]. 强激光与粒子束, 2010, 22(4):757-760 doi: 10.3788/HPLPB20102204.0757 Yuan Xuelin, Ding Zhenjie, Yu Jianguo, et al. Research on high-stability pulser based on avalanche transistor Marx circuit[J]. High Power Laser and Particle Beams, 2010, 22(4): 757-760 doi: 10.3788/HPLPB20102204.0757
[8]	Yuan Xuelin, Zhang Hongde, Bai Yang, et al. 4kV/30kHz short pulse generator based on time-domain power combining[C]//2010 IEEE International Conference on Ultra-Wideband. 2010: 1-4.
[9]	袁雪林, 乔汉青, 浩庆松, 等. 触发脉冲对雪崩管脉冲源的影响[J]. 强激光与粒子束, 2016, 28:035004 doi: 10.11884/HPLPB201628.035004 Yuan Xuelin, Qiao Hanqing, Hao Qingsong, et al. Influence of trigger pulse on pulse generator based on avalanche transistor[J]. High Power Laser and Particle Beams, 2016, 28: 035004 doi: 10.11884/HPLPB201628.035004
[10]	Li Chengxiang, Wang Enzhao, Tan Jianwen, et al. Design and development of a compact all-solid-state high-frequency picosecond-pulse generator[J]. IEEE Transactions on Plasma Science, 2018, 46(10): 3249-3256. doi: 10.1109/TPS.2018.2850153
[11]	Gao Mingxiang, Xie Yanzhao, Wang Siqi, et al. A wideband picosecond pulsed electric fields (psPEF) exposure system for the nanoporation of biological cells[J]. Bioelectrochemistry, 2021, 140: 107790. doi: 10.1016/j.bioelechem.2021.107790
[12]	He Renjie, Li Yang, Liu Zhennan, et al. Development of a high peak voltage picoseconds avalanche transistor based Marx bank circuit[J]. IEEE Access, 2021, 9: 64844-64851. doi: 10.1109/ACCESS.2021.3075960
[13]	张春艳, 赵青, 刘成林, 等. 探地雷达超宽带高斯脉冲信号源的设计[J]. 强激光与粒子束, 2013, 25(3):680-684 doi: 10.3788/HPLPB20132503.0680 Zhang Chunyan, Zhao Qing, Liu Chenglin, et al. Design of ultra-wideband Gaussian pulse source for ground penetrating radar[J]. High Power Laser and Particle Beams, 2013, 25(3): 680-684 doi: 10.3788/HPLPB20132503.0680
[14]	Guo Yilong, Yan Ningning, Guo Shenhui, et al. 500 ps/1 kV pulse generator based on avalanche transistor Marx circuit[C]//2013 International Workshop on Microwave and Millimeter Wave Circuits and System Technology. 2013: 296-299.
[15]	Li Chengxiang, Zhang Ruizhe, Yao Chenguo, et al. Development and simulation of a compact picosecond pulse generator based on avalanche transistorized Marx circuit and microstrip transmission theory[J]. IEEE Transactions on Plasma Science, 2016, 44(10): 1907-1913. doi: 10.1109/TPS.2016.2547944
[16]	Li Chengxiang, Wang Enzhao, Yao Chenguo, et al. Compact solid-state Marx-bank sub-nanosecond pulse generator based on gradient transmission line theory[J]. IEEE Transactions on Dielectrics and Electrical Insulation, 2017, 24(4): 2181-2188. doi: 10.1109/TDEI.2017.006367
[17]	Vainshtein S N, Duan Guoyong, Filimonov A V, et al. Switching mechanisms triggered by a collector voltage ramp in avalanche transistors with short-connected base and emitter[J]. IEEE Transactions on Electron Devices, 2016, 63(8): 3044-3048. doi: 10.1109/TED.2016.2581320
[18]	Duan Guoyong, Vainshtein S N, Kostamovaara J T. Modified high-power nanosecond Marx generator prevents destructive current filamentation[J]. IEEE Transactions on Power Electronics, 2017, 32(10): 7845-7850. doi: 10.1109/TPEL.2016.2632974
[19]	Grekhov I V, Kardo-Sysoev A F, Kostina L S, et al. High-power subnanosecond switch[J]. Electronics Letters, 1981, 17: 422. doi: 10.1049/el:19810293
[20]	Cheng Zhenbo, Ning Hui, Tang Chuanxiang, et al. Influence of avalanche transistor switching mode on waveform characteristics of solid-state pulse source[J]. Review of Scientific Instruments, 2023, 94: 104708. doi: 10.1063/5.0166719
[21]	Li Jiangtao, Zhong Xu, Li Jianhao, et al. Theoretical analysis and experimental study on an avalanche transistor-based Marx generator[J]. IEEE Transactions on Plasma Science, 2015, 43(10): 3399-3405. doi: 10.1109/TPS.2015.2436373
[22]	Shen Saikang, Yan Jiaqi, Wang Yanan, et al. Further investigations on a modified avalanche transistor-based Marx bank circuit[J]. IEEE Transactions on Instrumentation and Measurement, 2020, 69(10): 8506-8513. doi: 10.1109/TIM.2020.2993343