Preliminary study on laser initiated multi-gate semiconductor switch

Liu Hongwei; Wang Lingyun; Luan Chongbiao; Yuan Jianqiang; Xie Weiping; Yang Jie; He Yang; Fu Jiabin; Xu Le

doi:10.11884/HPLPB202436.240331

Volume 36 Issue 11

Nov. 2024

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Liu Hongwei, Wang Lingyun, Luan Chongbiao, et al. Preliminary study on laser initiated multi-gate semiconductor switch[J]. High Power Laser and Particle Beams, 2024, 36: 115004. doi: 10.11884/HPLPB202436.240331

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Liu Hongwei, Wang Lingyun, Luan Chongbiao, et al. Preliminary study on laser initiated multi-gate semiconductor switch[J]. High Power Laser and Particle Beams, 2024, 36: 115004. doi: 10.11884/HPLPB202436.240331

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Preliminary study on laser initiated multi-gate semiconductor switch

doi: 10.11884/HPLPB202436.240331

1.
Institute of Fluid Physics, China Academy of Engineering Physics, Key Laboratory of Pulsed power Technology, Mianyang 621900, Sichuan
2.
College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China

Received Date: 2024-09-15
Accepted Date: 2024-10-27
Rev Recd Date: 2024-10-27

Available Online: 2024-10-31

Publish Date: 2024-11-01

Abstract

Abstract

Solid state pulse power sources are widely used in the field of pulse power technology and have become a new research hotspot. Among them, high-power solid-state switching devices are the core of solid-state pulse power sources. This article reports a new type of laser initiated multi gate semiconductor switch (LIMS), which has two working modes: photo induced linear mode and field induced gain mode. It solves the problem of low current rise rate in traditional electronic control devices and achieves high current rise rate of the device. Experimental tests in photo induced linear mode showed a current rise rate of 454 kA/μs. The switch has been preliminarily applied in fields such as detonator initiation and electromagnetic pulse simulation.
- laser initiated multi gate semiconductor switch,
- solid state pulse power generator,
- repetition frequency

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References(17)

References

[1]	江伟华. 基于固态器件的高重频脉冲功率技术[J]. 强激光与粒子束, 2010, 22(3):561-564 doi: 10.3788/HPLPB20102203.0561 Jiang Weihua. High repetition-rate pulsed power generation using solid-state switches[J]. High Power Laser and Particle Beams, 2010, 22(3): 561-564 doi: 10.3788/HPLPB20102203.0561
[2]	丁臻捷, 浩庆松, 苏建仓, 等. 基于半导体断路开关的8MW, 10kHz脉冲发生器[J]. 强激光与粒子束, 2009, 21(10):1575-1578 Ding Zhenjie, Hao Qingsong, Su Jiancang, et al. 8MW, 10kHz semiconductor opening switch pulsed generator[J]. High Power Laser and Particle Beams, 2009, 21(10): 1575-1578
[3]	杨海燕, 刘纯亮. 基于半导体断路开关的脉冲功率源及其应用[J]. 真空电子技术, 2008(1):12-15 doi: 10.3969/j.issn.1002-8935.2008.01.004 Yang Haiyan, Liu Chunliang. SOS-based pulsed power generator and its applications[J]. Vacuum Electronics, 2008(1): 12-15 doi: 10.3969/j.issn.1002-8935.2008.01.004
[4]	王刚, 苏建仓, 丁臻捷, 等. 基于SOS和LTD技术的高重复频率脉冲发生器[J]. 强激光与粒子束, 2014, 26:045011 doi: 10.11884/HPLPB201426.045011 Wang Gang, Su Jiancang, Ding Zhenjie, et al. Repetitive frequency pulsed generator based on semiconductor opening switch and linear transformer driver[J]. High Power Laser and Particle Beams, 2014, 26: 045011 doi: 10.11884/HPLPB201426.045011
[5]	梁琳, 余岳辉, 尚超. 大功率RSD开关多单元并联技术[J]. 高电压技术, 2009, 35(2):329-334 Liang Lin, Yu Yuehui, Shang Chao. Multi-cell parallel connection technology for great power switch RSD[J]. High Voltage Engineering, 2009, 35(2): 329-334
[6]	Cassel R L, Hitchcock R N, Hitchcock S S. A high power dynamically flexible pulse width radar modulator[C]//Proceedings of 2007 16th IEEE International Pulsed Power Conference. 2007: 1492-1494.
[7]	李洪涛, 王传伟, 王凌云, 等. 500 kV全固态Marx发生器[J]. 强激光与粒子束, 2012, 24(4):917-920 doi: 10.3788/HPLPB20122404.0917 Li Hongtao, Wang Chuanwei, Wang Lingyun, et al. 500 kV all-solid-state Marx generator[J]. High Power Laser and Particle Beams, 2012, 24(4): 917-920 doi: 10.3788/HPLPB20122404.0917
[8]	江伟华. 高重复频率脉冲功率技术及其应用: (5)脉冲叠加的意义[J]. 强激光与粒子束, 2013, 25(8):1877-1882 doi: 10.3788/HPLPB20132508.1877 Jiang Weihua. Repetition rate pulsed power technology and its applications: (Ⅴ) the implication of pulse adding[J]. High Power Laser and Particle Beams, 2013, 25(8): 1877-1882 doi: 10.3788/HPLPB20132508.1877
[9]	Rao Junfeng, Zhu Yicheng, Wang Yonggang, et al. Study on the basic characteristics of solid-state linear transformer drivers[J]. IEEE Transactions on Plasma Science, 2020, 48(9): 3168-3175. doi: 10.1109/TPS.2020.3013292
[10]	刘宏伟, 李洪涛, 王传伟, 等. 基于IGBT开关的重复频率直线变压器[J]. 强激光与粒子束, 2011, 23(8):2243-2246 doi: 10.3788/HPLPB20112308.2243 Liu Hongwei, Li Hongtao, Wang Chuanwei, et al. Repetitive linear transformer driver based on IGBTs[J]. High Power Laser and Particle Beams, 2011, 23(8): 2243-2246 doi: 10.3788/HPLPB20112308.2243
[11]	张良, 秦玲, 黄子平, 等. MHz重复频率固体调制器实验研究[J]. 强激光与粒子束, 2009, 21(8):1250-1254 Zhang Liang, Qin Ling, Huang Ziping, et al. Experimental research on MHz repetition rate solid-state modulator[J]. High Power Laser and Particle Beams, 2009, 21(8): 1250-1254
[12]	Nunnally W C. Critical component requirements for compact pulse power system architectures[J]. IEEE Transactions on Plasma Science, 2005, 33(4): 1262-1267. doi: 10.1109/TPS.2005.852406
[13]	姜苹, 田青, 李洪涛, 等. 基于光导开关及层叠Blumlein线的纳秒脉冲源[J]. 强激光与粒子束, 2013, 25(4):1063-1067 doi: 10.3788/HPLPB20132504.1063 Jiang Ping, Tian Qing, Li Hongtao, et al. Nanosecond-pulsed power source based on photoconductive semiconductor switches and stacked Blumlein line[J]. High Power Laser and Particle Beams, 2013, 25(4): 1063-1067 doi: 10.3788/HPLPB20132504.1063
[14]	Ma Xun, Deng Jianjun, Liu Hongwei, et al. Development of all-solid-state flash X-ray generator with photoconductive semiconductor switches[J]. Review of Scientific Instruments, 2014, 85(9): 093307. doi: 10.1063/1.4895829
[15]	Luan Chongbiao, Liu Hongwei, Fu Jiabin, et al. Study of a Si-based light initiated multi-gate semiconductor switch for high temperatures[J]. Scientific Reports, 2022, 12(1): 15508. doi: 10.1038/s41598-022-19767-4
[16]	郭帆, 何小平, 王海洋, 等. 晶闸管触发开通特性[J]. 强激光与粒子束, 2012, 24(10):2483-2487 doi: 10.3788/HPLPB20122410.2483 Guo Fan, He Xiaoping, Wang Haiyang, et al. Switching characteristics of triggered thyristor[J]. High Power Laser and Particle Beams, 2012, 24(10): 2483-2487 doi: 10.3788/HPLPB20122410.2483
[17]	Luan Chongbiao, Liu Hongwei, Ma Xun, et al. All-solid-state pulsed current injection source based on the light initiated multi-gate semiconductor switches[J]. Review of Scientific Instruments, 2022, 93(1): 014705. doi: 10.1063/5.0076291