High voltage electromagnetic pulse generation using semiconductor switches

Liang Qinjin; Deng XiaoLei; Shi Xiaoyan; Pan Wenwu

doi:10.3788/HPLPB20122402.0497

Volume 24 Issue 02

Jun. 2016

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Article Navigation > High Power Laser and Particle Beams > 2012 > 24(02): 497-500

Liang Qinjin, Deng XiaoLei, Shi Xiaoyan, et al. High voltage electromagnetic pulse generation using semiconductor switches[J]. High Power Laser and Particle Beams, 2012, 24: 497-500. doi: 10.3788/HPLPB20122402.0497

Citation:

Liang Qinjin, Deng XiaoLei, Shi Xiaoyan, et al. High voltage electromagnetic pulse generation using semiconductor switches[J]. High Power Laser and Particle Beams, 2012, 24: 497-500. doi: 10.3788/HPLPB20122402.0497

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High voltage electromagnetic pulse generation using semiconductor switches

doi: 10.3788/HPLPB20122402.0497

1.
Laboratory of High Power Microwave Technology,Institute of Applied Electronics,CAEP,P.O.Box 919-1017,Mianyang 621900,China;
2.
School of Communication and Information Engineering,University of Electronic Science and Technology of China,Chengdu 611731,China

Received Date: 2011-10-10
Rev Recd Date: 2011-11-08
Publish Date: 2012-02-15

Abstract

Abstract

According to the particular structures and working principles of high voltage semiconductor switches, drift step recovery diodes and fast ionization devices, a high pulse repetition frequency(PRF) and high voltage nanosecond electromagnetic pulse generation method is provided. The technology path is to transmit the high energy of storage inductance on the FID and load through the DSRD.The feasibility of the method is tested and verified by experiments under input trigger PRFs as high as 120, 200 and 300 kHz, and the output pulse voltages are 1.62, 1.41 and 1.36 kV, respectively.
- semiconductor switch,
- high voltage pulse,
- high pulse repetition frequency,
- electromagnetic pulse generation