Zhao Yue, Wang Chuanwei, Wang Lingyun, et al. Semiconductor arrester solid field distortion three-electrode discharge switch[J]. High Power Laser and Particle Beams, 2012, 24: 868-870. doi: 10.3788/HPLPB20122404.0868
Citation:
Zhao Yue, Wang Chuanwei, Wang Lingyun, et al. Semiconductor arrester solid field distortion three-electrode discharge switch[J]. High Power Laser and Particle Beams, 2012, 24: 868-870. doi: 10.3788/HPLPB20122404.0868
Zhao Yue, Wang Chuanwei, Wang Lingyun, et al. Semiconductor arrester solid field distortion three-electrode discharge switch[J]. High Power Laser and Particle Beams, 2012, 24: 868-870. doi: 10.3788/HPLPB20122404.0868
Citation:
Zhao Yue, Wang Chuanwei, Wang Lingyun, et al. Semiconductor arrester solid field distortion three-electrode discharge switch[J]. High Power Laser and Particle Beams, 2012, 24: 868-870. doi: 10.3788/HPLPB20122404.0868
A three-electrode solid field distortion switch is designed based on over-voltage self-breakdown of semiconductor arrester. It includes two semiconductor arrester arrays and a trigger electrode. When it is triggered, self-breakdown of arrester arrays happens consecutively to turn on the switch. The voltage of load is tested by experiment with specific trigger pulse. It is preliminarily proved that the design of the solid semiconductor arrester field distortion three-electrode discharge switch is feasible. Meantime, measures for decreasing transient inductance, and increasing current, operating voltage and repetitive rate are discussed.