Thermal desorption behavior of ion-implanted helium from erbium and scandium films

The thermal desorption behavior of ion-implanted helium in erbium and scandium films was investigated by means of thermal helium desorption spectrometry. The peak positions of ion-implanted helium desorption are the same for erbium films with different surface morphologies. The degree of denseness of films, however, will affect the amount of released helium as the implanted helium releases through the path of cavities existing in the loose film before thermal desorption. The difference in peak positions of helium desorption from erbium and scandium films may be related to the depth distribution of helium and the degree of denseness of films. The helium implantation depths measured by enhanced proton backscattering spectrometry are 210 and 308 nm, respectively, for erbium and scandium films with the implantation energy of 60 keV.