GonG Lei, Wu Zhensen, Bai Lu. Light scattering by wafers and multi shaped defect particles[J]. High Power Laser and Particle Beams, 2012, 24: 2731-2734. doi: 10.3788/HPLPB20122411.2731
Citation:
GonG Lei, Wu Zhensen, Bai Lu. Light scattering by wafers and multi shaped defect particles[J]. High Power Laser and Particle Beams, 2012, 24: 2731-2734. doi: 10.3788/HPLPB20122411.2731
GonG Lei, Wu Zhensen, Bai Lu. Light scattering by wafers and multi shaped defect particles[J]. High Power Laser and Particle Beams, 2012, 24: 2731-2734. doi: 10.3788/HPLPB20122411.2731
Citation:
GonG Lei, Wu Zhensen, Bai Lu. Light scattering by wafers and multi shaped defect particles[J]. High Power Laser and Particle Beams, 2012, 24: 2731-2734. doi: 10.3788/HPLPB20122411.2731
Three kinds of defect-particle-scattering models are put forward for nondestructive examination project. The generalized perfectly matched layer can work very well in the terminate loss media. Against the half-space problem about wafers and defect particles, the connect boundary condition is given by the three-wave method. The reciprocity theorem is applied to near-far field extrapolation. The angular distribution of many kinds of Cu and SiO2 defect particles and field distribution of the inlaid Cu sphere particles by p polarization and s polarization are given. Results show that the angular distribution and field distribution are related to the shape of particles. The shake of scattering field about ellipsoid particles is more drastic than column particles. The differential field intensity is very minor with s polarization, which makes against to inverse the characteristic of defect particles. Therefore, p polarization light is suggested to use in nondestructive examination in the project.