Zhang Chao, Zhang Qingmao, Guo Liang, et al. Ablating process with 355 nm laser for amorphous silicon thin-film solar cell[J]. High Power Laser and Particle Beams, 2012, 24: 2751-2756. doi: 10.3788/HPLPB20122411.2751
Citation:
Zhang Chao, Zhang Qingmao, Guo Liang, et al. Ablating process with 355 nm laser for amorphous silicon thin-film solar cell[J]. High Power Laser and Particle Beams, 2012, 24: 2751-2756. doi: 10.3788/HPLPB20122411.2751
Zhang Chao, Zhang Qingmao, Guo Liang, et al. Ablating process with 355 nm laser for amorphous silicon thin-film solar cell[J]. High Power Laser and Particle Beams, 2012, 24: 2751-2756. doi: 10.3788/HPLPB20122411.2751
Citation:
Zhang Chao, Zhang Qingmao, Guo Liang, et al. Ablating process with 355 nm laser for amorphous silicon thin-film solar cell[J]. High Power Laser and Particle Beams, 2012, 24: 2751-2756. doi: 10.3788/HPLPB20122411.2751
In order to improve the efficiency of solar cell, we make some changes of laser ablation. This study focuses on using 355 nm laser with nanosecond pulse duration to ablate ZnO:Al (P1), -Si (P2), and back contact (P3) selectively. Isolation resistances are measured by multimeter. Scanning electron microscope and 3D laser scan microscope are used to measure ablation grooves microstructure and 3D images. Laser Raman spectroscopy is employed to detect the crystallization of -Si in the edge of ablation. The experimental results show that the effect of groove ablated by 355 nm laser whose isolation resistance reaches up to 20 M is best when a 600 mm/s, 40 kHz, 1.74 W laser works on its focal position, and the ablation with 355 nm laser can effectively decrease the influence caused by laser heating effect and the crystallization area of -Si in the edge of ablation.
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