Fabrication of 2.0 μm Sb-based multi-quantum-well materials

This paper studies parameters of InGaAsSb/AlGaAsSb multi-quantum-well (MQW) materials grown by molecular beam epitaxy (MBE), including the growth rate, growth temperature and flux for high quality MQW materials, respectively. As well, characterization of the epi-layers by X-ray diffraction (XRD) indicates high uniformity and excellent crystalline quality with satellite peaks. Emitting wavelength is about 2.0 m measured by photoluminescence(PL) at room temperature (RT). The excellent crystalline quality and optical characteristic are obtained through optimization of growth conditions and structure parameters. The threshold current of the fabricated device is about 300 mA, the output power is 22 mW at room temperature.