Characteristics of temperature during PIN limiter thermal damage caused by microwaves

The thermal damage mechanism of PIN limiter caused by microwaves was analyzed. Based on physical simulation analysis，the devices thermal damage physical model was established with software Sentaurus-TCAD. Transient temperature change and distribution of temperature in the process of PIN diode under injections of 5.3, 7.5 and 9.4 GHz microwave signals were studied. Simulation and experimental results show that the temperature increases rapidly in the spike leakage stage and near burnout stage, and increases slowly in the flat leakage stage. The peak temperature most likely appears in the I layer or on the edge between I layer and P layer.