In situ stress evolution in magnetron-sputtered Si-based thin films

An in situ multi-beam optical stress sensor system was used to monitor and analyze the force per unit width and stress evolution during and after the deposition of magnetron-sputtered Si and SiNx films. A rapid stress relaxation, as well as a recovery, was observed in both films. Stress in Si films was reversible, while partial reversible in SiNx films. Physical adsorption and desorption are the main factors responsible for the stress relaxation and recovery. The non-reversible stress component results from chemical adsorption. And a model based on adsorption is proposed to explain the stress relaxation.