You Jianwei, Zhang Jianfeng, Li Yun, et al. Research and extension of Vaughan’s secondary electron emission[J]. High Power Laser and Particle Beams, 2013, 25: 3035-3039. doi: 10.3788/HPLPB20132511.3035
Citation:
You Jianwei, Zhang Jianfeng, Li Yun, et al. Research and extension of Vaughan’s secondary electron emission[J]. High Power Laser and Particle Beams, 2013, 25: 3035-3039. doi: 10.3788/HPLPB20132511.3035
You Jianwei, Zhang Jianfeng, Li Yun, et al. Research and extension of Vaughan’s secondary electron emission[J]. High Power Laser and Particle Beams, 2013, 25: 3035-3039. doi: 10.3788/HPLPB20132511.3035
Citation:
You Jianwei, Zhang Jianfeng, Li Yun, et al. Research and extension of Vaughan’s secondary electron emission[J]. High Power Laser and Particle Beams, 2013, 25: 3035-3039. doi: 10.3788/HPLPB20132511.3035
The material databases for the Vaughans secondary electron model which is popularly utilized in the plasma simulation are abundant. Most of them are highly accurate and reliable, due to the validations of experiments. In order to integrate these precious databases into our electromagnetic-particle simulation platform and improve the computational precision of our simulation platform, the classic Vaughans model for the secondary electron emission is firstly researched. Based on the derivation of the numerical method to generate the actual number of secondary electrons, the way to calculate the energy of each secondary electron and the method to obtain the emissive angle are successfully proposed. Due to our work, it is more convenient to numerically implement the Vaughans theorem in practical applications. Furthermore, the accuracy and the robustness of our proposed methods are validated by the computational results in this paper.