Fabrication of silicon microstructure for ICF target

Zhang Jicheng; Luo Yuechuan; Ma Zhibo; Yang Miao; Zhou Minjie; Li Jia; Wu Weidong; Tang Yongjian

doi:3251

Volume 25 Issue 12

Dec. 2013

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Article Navigation > High Power Laser and Particle Beams > 2013 > 25(12): 3251-3254

Zhang Jicheng, Luo Yuechuan, Ma Zhibo, et al. Fabrication of silicon microstructure for ICF target[J]. High Power Laser and Particle Beams, 2013, 25: 3251-3254. doi: 3251

Citation:

Zhang Jicheng, Luo Yuechuan, Ma Zhibo, et al. Fabrication of silicon microstructure for ICF target[J]. High Power Laser and Particle Beams, 2013, 25: 3251-3254. doi: 3251

Zhang Jicheng, Luo Yuechuan, Ma Zhibo, et al. Fabrication of silicon microstructure for ICF target[J]. High Power Laser and Particle Beams, 2013, 25: 3251-3254. doi: 3251

Citation:

Zhang Jicheng, Luo Yuechuan, Ma Zhibo, et al. Fabrication of silicon microstructure for ICF target[J]. High Power Laser and Particle Beams, 2013, 25: 3251-3254. doi: 3251

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Fabrication of silicon microstructure for ICF target

doi: 3251

1.
Research Center of Laser Fusion,CAEP,P.O.Box 919-987,Mianyang 621900,China;
2.
Micro and Nano Electromechanical Systems Laboratory,Northwestern Polytechnical University,Xi’an 710072,China

Received Date: 2013-07-22
Rev Recd Date: 2013-08-20
Publish Date: 2013-12-15

Abstract

Abstract

Silicon flexure microstructure has very important function for supporting and cooling roles in ICF target. In this paper, a silicon arm is fabricated using deep reactive ion etching(DRIE) method. The results of scanning electron microscopy(SEM), white light interferometer and optical microscopy measurement show that the Si microstructure has a smooth surface and vertical sidewalls, the angle of vertical sidewall is nearly 88 degrees. The displacement of silicon flexure microstructure along radial direction is more than 20 m.
- ICF target,
- silicon supporting cooling arm,
- deep reactive ion etching