A new analytic model describing photovoltaic effect

A new analytic model describing photovoltaic effect in photovoltaic infrared detectors is put forward, which disposes the relation between photoelectron concentrations at the two sides of the depletion region of a p-n junction in common cases while Lu Qisheng’s analytic model does in special case. By comparison among the new model, Lu’s model and another analytic model, it is explained why the former two models, different from the latter, can explain signal saturation effect which is observed in photovoltaic infrared detectors under laser irradiation.