The influence of annealing and Indium compositions on optical properties of InGaAs quantum dots(QDs) in the GaAs or AlGaAs matrix, grown by molecula r beam epitaxy, has been investigated. It is shown that increasing Indium compos ition in QDs leads to an enhancement of carrier location energy and an increase of the energy gap between ground and excited states in QDs.Vertical couple d QDs with wide band gap AlGaAs matrix will lead to a highert hermal stability. In structures of vertical coupled InGaAs Q Ds in the AlGaAs matrix, high temperature (T=830℃) postgrowth annealing all ows to improve the quality of AlGaAs layers grown at low temperature, while the energy spectra of structures is not significantly changed.