The mechanism of HPM pulse-duration damage effect on semiconductor component

li ping; liu guo-zhi; huang wen-hua; wang liang-ping

Volume 13 Issue 03

Jun. 2001

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li ping, liu guo-zhi, huang wen-hua, et al. The mechanism of HPM pulse-duration damage effect on semiconductor component[J]. High Power Laser and Particle Beams, 2001, 13.

Citation:

li ping, liu guo-zhi, huang wen-hua, et al. The mechanism of HPM pulse-duration damage effect on semiconductor component[J]. High Power Laser and Particle Beams, 2001, 13.

li ping, liu guo-zhi, huang wen-hua, et al. The mechanism of HPM pulse-duration damage effect on semiconductor component[J]. High Power Laser and Particle Beams, 2001, 13.

Citation:

li ping, liu guo-zhi, huang wen-hua, et al. The mechanism of HPM pulse-duration damage effect on semiconductor component[J]. High Power Laser and Particle Beams, 2001, 13.

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The mechanism of HPM pulse-duration damage effect on semiconductor component

1.
Northwest Institute of Nuclear Technology,P.O.Box 69-26,Xi’an 710024,China

Publish Date: 2001-06-15

Abstract

Abstract

The mechanism of HPM pulse-duration damage effect on semiconductor component results from heat accumulation and diffusion process in the defect area. The experiential formulae of HPM pulse-duration damage effect in the range of whole pulse-duration, long pulse-duration as well as short pulse-duration are obtained, which agree with experiments and numerical simulation effect data very well.
- semiconductor component,
- hpm,
- pulse-duration,
- damage effect