Volume 09 Issue 04
Apr.  1997
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Article Navigation >  High Power Laser and Particle Beams  > 1997  >  09(04): 0-

  • Publish Date: 1997-04-15
    Abstract
  • Ａ　ｎｏｖｅｌ　ｈｉｇｈ　ｐｏｗｅｒ　ｍｉｃｒｏｗａｖｅ ｄｅｔｅｃｔｏｒ　ｗａｓ　ｄｅｓｃｒｉｂｅｄ　ｉｎ　ｔｈｉｓ　ｐａｐｅｒ， ｗｈｉｃｈｗａｓ　ｄｅｖｅｌｏｐｅｄ　ｂａｓｅｄ　ｏｎ　ｈｏｔ　ｃａｒｒｉｅｒｓ ｅｆｆｅｃｔｉｎ　Ｐｔｙｐｅ　ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ　ｆｏｒ ｍｅａｓｕｒｉｎｇ　ｔｈｅｐｏｗｅｒ　ｏｆ　ｈｉｇｈ　ｐｏｗｅｒ ｍｉｃｒｏｗａｖｅ（ＨＰＭ）．Ｔｈｅｄｅｔｅｃｔｏｒ　ｃｏｎｓｉｓｔｓ　ｏｆ Ｐｔｙｐｅ　ｓｉｌｉｃｏｎ　ａｓｓｅｎｓｏｒ　ｕｎｉｔ　ａｎｄ　ｓｔａｎｄａｒｄ ｗａｖｅ　ｇｕｉｄｅ　ａｎｄ　ｉｓｃｈａｃｔｅｒｉｚｅｄ　ｂｙ　ｉｔｓ> ｃａｐａｂｉｌｉｔｙ　ｏｆｕｎｄｅｒｔａｋｉｎｇ　ｍｕｃｈ　ｈｉｇｈｅｒ ｐｏｗｅｒ　ｏｆ　 mｉｃｒｏｗａｖｅ（ａｂｏｕｔ　６　ｏｒｄｅｒｓ　ｈｉｇｈｅｒ ｔｈａｎ　 ｏｒｄｉｎａｒｙｃｒｙｓｔａｌ　ｄｅｔｅｃｔｏｒｓ），ｆ
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      沈阳化工大学材料科学与工程学院 沈阳 110142

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