The calculation of the energy threshold in the pulsed laser simulation of single event upset

Based on the light absorption mechanism, the characters of the pulsed laser in the pulsed laser simulation of single event upset are analyzed. The Monte Carlo calculation of the used pulsed laser simulation of single event upset is put forward. In the simplified case of only considering the photon electrical effect, the relationship between the energy threshold of the incident pulsed laser and the critical charge of a silicon chip (or the linear energy transfer) is obtained, a function for calculating the upset cross-section of the silicon chip is also obtained. The calculated results show that the energy threshold is several picojoules corresponding to the linear energy transfer 0.05pC/m m. For the critical charge 0.05 0.20pC, the calculated energy threshold is several 10-11J, the upset c