shen hongbin, shen xueju, zhou bing, et al. Experimental study of 532 nm pulsed laser irradiating CCD[J]. High Power Laser and Particle Beams, 2009, 21.
Citation:
shen hongbin, shen xueju, zhou bing, et al. Experimental study of 532 nm pulsed laser irradiating CCD[J]. High Power Laser and Particle Beams, 2009, 21.
shen hongbin, shen xueju, zhou bing, et al. Experimental study of 532 nm pulsed laser irradiating CCD[J]. High Power Laser and Particle Beams, 2009, 21.
Citation:
shen hongbin, shen xueju, zhou bing, et al. Experimental study of 532 nm pulsed laser irradiating CCD[J]. High Power Laser and Particle Beams, 2009, 21.
The array CCD is irradiated by a 532 nm, 10 ns pulsed laser. According to the experiment phenomenon, hard damage process of CCD can be divided into 3 stages. In the first stage, when the CCD is irradiated by the laser with a low energy density, local white blind spots appears, which can not be recovered, while other parts of CCD can work normally. In the second stage, vertical bright white lines appear in the clock line direction of the light spot after irradiation, which can not work normally and can not be recovered by stopping irradiation. In the third stage, the CCD is damaged completely after being irradiated by the laser with a high energy density, and can not be recovered. Damaging mechanism of each stage is analyzed. Finally, aiming at the saturation and recovery stage of the CCD,