liu guanghui, fang ming, jin yunxia, et al. Sc2O3 substitution layer for application in 532 nm high refector films[J]. High Power Laser and Particle Beams, 2009, 21.
Citation:
liu guanghui, fang ming, jin yunxia, et al. Sc2O3 substitution layer for application in 532 nm high refector films[J]. High Power Laser and Particle Beams, 2009, 21.
liu guanghui, fang ming, jin yunxia, et al. Sc2O3 substitution layer for application in 532 nm high refector films[J]. High Power Laser and Particle Beams, 2009, 21.
Citation:
liu guanghui, fang ming, jin yunxia, et al. Sc2O3 substitution layer for application in 532 nm high refector films[J]. High Power Laser and Particle Beams, 2009, 21.
Research and Development Center for Optical Thin Film Coatings,Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences,P.O.Box 800-211,Shanghai 201800,China;
2.
Graduate University of Chinese Academy of Sciences,Beijing 100039,China
Sc2O3 substitution layer is introduced to 532 nm high reflector(HR) of HfO2/SiO2. According to its solution in hydrochloric acid, when failure occurs, putting the optics into acid, following by the solution of Sc2O3 substitution layer, the whole films are romoved clearly, then the substrates can be repolished simply and reused, time and cost can be saved greatly, too. 0% of Sc is detected by energy diffraction spectrum after acid soaking on BK7 substrates. Lamada900 spectrophotometer, optical interferometer and WykoNT1100 contourgraph are employed to characterize the transmittance, stress and surface morphology of the 532 nm HR films, and the laser induced damage thresholds of the films with 532 nm laser beam are measured b
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