shen jun, luo ai-yun, wu guang-ming, et al. Laser-induced damage threshold of hafnia thin films with chemical method[J]. High Power Laser and Particle Beams, 2007, 19.
Citation:
shen jun, luo ai-yun, wu guang-ming, et al. Laser-induced damage threshold of hafnia thin films with chemical method[J]. High Power Laser and Particle Beams, 2007, 19.
shen jun, luo ai-yun, wu guang-ming, et al. Laser-induced damage threshold of hafnia thin films with chemical method[J]. High Power Laser and Particle Beams, 2007, 19.
Citation:
shen jun, luo ai-yun, wu guang-ming, et al. Laser-induced damage threshold of hafnia thin films with chemical method[J]. High Power Laser and Particle Beams, 2007, 19.
HfO2 thin films were prepared with chemical method. The influences of heat treatment, UV irradiation and addition of inorganic Al2O3 on laser-induced damage thresholds (LIDT) of HfO2 thin films were studied. HfO2 thin films were characterized by FTIR and X-ray diffraction. And 1-on-1 laser-induced damage threshold tests on HfO2 thin films and HfO2-Al2O3 composite films were carried out with a Q-switched Nd:YAG high power laser at 1 064 nm with a pulse width of 10 ns. The research results showed that the LIDT of the HfO2 thin films could be improved by heating the thin films at 150 ℃.The LIDT of the thin films heated at 150 ℃ was 42.32 J/cm2, which was 82% higher than that of the as-prepared samples. The addition of inorganic Al2O3 to the HfO2 thin films could also enhance the LIDT of thi