Simulation study on thermal effect of Si film irradiated by ultra-short pulse laser

Using the model of self-consistent for transport dynamics in semiconductors, taking the silicon film as example, the temperature effects on the heat capacity of carrier and lattice, thermal conductivity, relaxation time have been studied with a finite difference method. The primary researches in this paper are on the thermal response of 2 μm Si film irradiated by 500 fs laser pulse. The numerical results indicate that after having been heated for 0.69 ps, the maximum electron temperature at the front surface occurs, after about 4.8 ps the temperature is nearly thermally equilibrated. The temperature of carriers change is rapidly because the heat capacity of carrier changes rapidly. The linear absorption and the rate of change of the carrier energy density due to the changes of the carrier