cui yan-xia, zhang lei, xu yao, et al. Preparation and properties of MgF2 anti-reflective thin film by sol-gel process[J]. High Power Laser and Particle Beams, 2008, 20.
Citation:
cui yan-xia, zhang lei, xu yao, et al. Preparation and properties of MgF2 anti-reflective thin film by sol-gel process[J]. High Power Laser and Particle Beams, 2008, 20.
cui yan-xia, zhang lei, xu yao, et al. Preparation and properties of MgF2 anti-reflective thin film by sol-gel process[J]. High Power Laser and Particle Beams, 2008, 20.
Citation:
cui yan-xia, zhang lei, xu yao, et al. Preparation and properties of MgF2 anti-reflective thin film by sol-gel process[J]. High Power Laser and Particle Beams, 2008, 20.
MgF2 anti-reflective thin films were successfully prepared in methanol media via sol-gel process using magnesium acetate and hydrofluoric acid as reactants. The influence of processing temperature on MgF2 sols was investigated. As-synthesized MgF2 sol was used to deposit AR films on quartz substrate, which could be applied for 355 nm UV laser. The results showed that MgF2 thin films had low refractive index, small surface roughness and good anti-reflective property in the UV region and high laser-induced damage threshold (LIDT) at 355 nm (6 ns pulses). The refractive index at 355 nm wavelength of film decreased with the increase of processing temperature. The transmittance and LIDT of quartz substrate with double-side MgF2 films both reached the maximum value, that is, 99.4% for transmitta
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