zhang jun, xie er-qing, xie yi-zhu, et al. Effects of substrate on ZnO thin films prepared by in situ oxidation of Zn3N2[J]. High Power Laser and Particle Beams, 2008, 20.
Citation:
zhang jun, xie er-qing, xie yi-zhu, et al. Effects of substrate on ZnO thin films prepared by in situ oxidation of Zn3N2[J]. High Power Laser and Particle Beams, 2008, 20.
zhang jun, xie er-qing, xie yi-zhu, et al. Effects of substrate on ZnO thin films prepared by in situ oxidation of Zn3N2[J]. High Power Laser and Particle Beams, 2008, 20.
Citation:
zhang jun, xie er-qing, xie yi-zhu, et al. Effects of substrate on ZnO thin films prepared by in situ oxidation of Zn3N2[J]. High Power Laser and Particle Beams, 2008, 20.
ZnO thin films on various substrates were prepared by in situ oxidation of RF sputtered Zn3N2 films. The structural and photoluminscent properties of ZnO films were measured by X-ray diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence (PL). XRD results showed that Zn3N2 films had been completely transformed into ZnO films after in situ oxidization at 500 ℃ for 3 h. The films on glass and fused silica glass substrates had no preferential orientation while the films on Si (100) substrates exhibited (002)axis preferred orientation. PL measurements showed that ZnO films on Si (100) and fused silica glass substrates possessed good photoluminscent properties with strong near band edge excitonic UV emission and weak defect-related deep-level emission in the visible region
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