zhang lin, zhang yi-men, zhang yu-ming, et al. Model and analysis of 4H-SiC Schottky diode as γ-ray detector[J]. High Power Laser and Particle Beams, 2008, 20.
Citation:
zhang lin, zhang yi-men, zhang yu-ming, et al. Model and analysis of 4H-SiC Schottky diode as γ-ray detector[J]. High Power Laser and Particle Beams, 2008, 20.
zhang lin, zhang yi-men, zhang yu-ming, et al. Model and analysis of 4H-SiC Schottky diode as γ-ray detector[J]. High Power Laser and Particle Beams, 2008, 20.
Citation:
zhang lin, zhang yi-men, zhang yu-ming, et al. Model and analysis of 4H-SiC Schottky diode as γ-ray detector[J]. High Power Laser and Particle Beams, 2008, 20.
In this paper, a numerical model is proposed based on the investigation of the operational mechanism of reversely biased 4H-SiC Schottky diode as γ-ray detector. The detector characteristics of dark current, current response and sensitivity at different bias voltages and irradiation doses are simulated. The sensitivity increases linearly with the square root of the total voltage across the Schottky diode. When the doping concentration in the epitarial layor is 2.2×1015 cm-3, the sensitivity is 13.9×10-9 C/Gy at zero bias, 24.5×10-9 C/Gy at bais of 100 V. The results from simulation agree very well with the experimental data.
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