zhang liang, qin ling, huang ziping, et al. Experimental research on MHz repetition rate solid-state modulator[J]. High Power Laser and Particle Beams, 2009, 21.
Citation:
zhang liang, qin ling, huang ziping, et al. Experimental research on MHz repetition rate solid-state modulator[J]. High Power Laser and Particle Beams, 2009, 21.
zhang liang, qin ling, huang ziping, et al. Experimental research on MHz repetition rate solid-state modulator[J]. High Power Laser and Particle Beams, 2009, 21.
Citation:
zhang liang, qin ling, huang ziping, et al. Experimental research on MHz repetition rate solid-state modulator[J]. High Power Laser and Particle Beams, 2009, 21.
Solid-state modulators based on power MOSFETs are promising pulsed power sources in producing high-voltage fast pulses with the pulse width agility in megahertz repetition rate. A solid-state modulator with 9 modules, each with 6 power MOSFETs in parallel, was designed and tested. The 9 modules were stacked in an inductive-adder configuration. The output voltage with amplitude of 6.2 kV, rise time of 20 ns and pulse width of 110 ns was achieved under 720 V charging voltage and 51 Ω resistance load in 2.5 MHz repetition rate.
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