cai houzhi, liu jinyuan, niu lihong, et al. Theoretical simulation of electron transit time and gain characteristics in microchannel plate[J]. High Power Laser and Particle Beams, 2009, 21.
Citation:
cai houzhi, liu jinyuan, niu lihong, et al. Theoretical simulation of electron transit time and gain characteristics in microchannel plate[J]. High Power Laser and Particle Beams, 2009, 21.
cai houzhi, liu jinyuan, niu lihong, et al. Theoretical simulation of electron transit time and gain characteristics in microchannel plate[J]. High Power Laser and Particle Beams, 2009, 21.
Citation:
cai houzhi, liu jinyuan, niu lihong, et al. Theoretical simulation of electron transit time and gain characteristics in microchannel plate[J]. High Power Laser and Particle Beams, 2009, 21.
The dynamic characteristics of micro-channel plate are simulated. The transit time and gain curves are obtained in the simulation. The simulation shows that the numbers of the electron collision on the channel wall of the microchannel plates(MCP) are related to the arriving time of the incident photoelectrons and the more frequently electrons collide with the channel, the longer transit time they need. The influence of the amplitude, width and shape of the driving voltage pulse on the exposure time and the gain of MCP are also studied when the incident electrons have a Gaussian distribution. It is concluded that the time of the peak value of the gain curve varies with different voltage pulse amplitude.
DownLoad: