ding zhenjie, hao qingsong, su jiancang, et al. 8 MW, 10 kHz semiconductor opening switch pulsed generator[J]. High Power Laser and Particle Beams, 2009, 21.
Citation:
ding zhenjie, hao qingsong, su jiancang, et al. 8 MW, 10 kHz semiconductor opening switch pulsed generator[J]. High Power Laser and Particle Beams, 2009, 21.
ding zhenjie, hao qingsong, su jiancang, et al. 8 MW, 10 kHz semiconductor opening switch pulsed generator[J]. High Power Laser and Particle Beams, 2009, 21.
Citation:
ding zhenjie, hao qingsong, su jiancang, et al. 8 MW, 10 kHz semiconductor opening switch pulsed generator[J]. High Power Laser and Particle Beams, 2009, 21.
This paper presents the research carried out with the semiconductor opening switch(SOS). Loaded with high frequency pumping current, the switch could work on high frequency (1 MHz). A high frequency nanosecond-pulsed generator with a pulse power up to 9.3 MW, output voltage of 22.0~35.7 kV, pulse duration of about 10 ns, and repetition rates of 10 kHz is developed. Ultrafast IGBT is used in primary charged unit to provide low voltage pulse for magnetic compression unit. The magnetic switch and saturable transformer are used to compress primary pulse and pump SOS. The reverse pumping current switching-off is performed by SOS in about 4.3 ns, which results in the formation of an output voltage pulse across output load.
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