Irradiation effect of alpha particles on pn-SiC diode

The mechanism is studied by Monte Carlo method while 1.8 MeV and 4.3 MeV alpha particles irradiating the pn junction 6H-SiC diode. In the first the process and parameters of the diode detector are introduced, and then a simulation model is established according to the structure of the detector. The research results reflect the whole transport process of alpha particles in the detector directly. The main effect of alpha particles is ionization, which produces electron-hole pairs with certain distribution. The energy loss distribution of ionization and the charge collection efficiency equation of the diode detector are provided in the end.