Volume 22 Issue 02
Feb.  2010
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gu mu, zhang min, liu xiaolin, et al. Growth process of CsI scintillating films with micro-columnar structure by thermal evaporation[J]. High Power Laser and Particle Beams, 2010, 22.
Citation: gu mu, zhang min, liu xiaolin, et al. Growth process of CsI scintillating films with micro-columnar structure by thermal evaporation[J]. High Power Laser and Particle Beams, 2010, 22.

Growth process of CsI scintillating films with micro-columnar structure by thermal evaporation

  • Publish Date: 2010-02-15
  • CsI scintillating films with micro-columnar structure were deposited on the silica glass substrates by thermal evaporation. Their morphologies, crystal structures and luminescent properties were analyzed with X-ray diffraction, scanning electron microscope and emission spectrum. The results showed that for substrate temperature of 260℃ and the deposition rate of 3 nm·s-1, the film was deposited would have an ideal micro-columnar morphology, (110) preferred orientation and good transmittance. The CsI film would exhibit two emission peaks at 303 nm and 438 nm under UV excitation, where the later peak was dominant. However, the former peak would shift to 315 nm and became the main one under X-ray excitation, whilst the peak near 438 nm was quite small. The phenomenon indicated th
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