huang wei, chang shaohui, chen zhizhan, et al. On-state characteristics of an 11 kV high-power SiC photoconductive semiconductor switch[J]. High Power Laser and Particle Beams, 2010, 22.
Citation:
huang wei, chang shaohui, chen zhizhan, et al. On-state characteristics of an 11 kV high-power SiC photoconductive semiconductor switch[J]. High Power Laser and Particle Beams, 2010, 22.
huang wei, chang shaohui, chen zhizhan, et al. On-state characteristics of an 11 kV high-power SiC photoconductive semiconductor switch[J]. High Power Laser and Particle Beams, 2010, 22.
Citation:
huang wei, chang shaohui, chen zhizhan, et al. On-state characteristics of an 11 kV high-power SiC photoconductive semiconductor switch[J]. High Power Laser and Particle Beams, 2010, 22.
A high-power photoconductive semiconductor switch(PCSS) has been fabricated by semi-insulating silicon carbide crystal. The width of the output voltage pulse was about 40 ns and the rise-time was 9.6 ns, when a KrF excimer laser was adopted as the excitation source. Two different steps were observed in the rising edge. With the input voltage rising from 1 kV to 11 kV, the on-state resistance remained about 12 Ω. The peak current through the PCSS came to be 159 A with the 11 kV input voltage, while the peak power reached 1.4 MW. No carrier saturation has been observed in the experiment.
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