Volume 22 Issue 03
Mar.  2010
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diao wenhao, jiang weihua, wang xinxin. Marx generator using metal-oxide-semiconductor field-effect transistors[J]. High Power Laser and Particle Beams, 2010, 22.
Citation: diao wenhao, jiang weihua, wang xinxin. Marx generator using metal-oxide-semiconductor field-effect transistors[J]. High Power Laser and Particle Beams, 2010, 22.

Marx generator using metal-oxide-semiconductor field-effect transistors

  • Publish Date: 2010-03-15
  • A new design method of pulsed power generatior based on semiconductor switches has been studied. The generator using metal-oxide-semiconductor field-effect transistors(MOSFETs) can work in high repetition rate, and can also reduce the circuit loss effectively due to the unique circuit structure. The crux of the experiment is how to synchronize all the drive signals of the semiconductor switches. The measure that regulating each drive signal was taken to compensate the influence caused by the difference of each device. Meanwhile special efforts were made on the issues of isolation, such as the optical isolation for the switching signals and the isolated DC-DC converters for power supply, which are important not only for operation synchronization but also for device protection. The Marx gen
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