liang qinjin, shi xiaoyan, pan wenwu. High voltage semiconductor fast ionization device and its properties of pulse compression[J]. High Power Laser and Particle Beams, 2011, 23.
Citation:
liang qinjin, shi xiaoyan, pan wenwu. High voltage semiconductor fast ionization device and its properties of pulse compression[J]. High Power Laser and Particle Beams, 2011, 23.
liang qinjin, shi xiaoyan, pan wenwu. High voltage semiconductor fast ionization device and its properties of pulse compression[J]. High Power Laser and Particle Beams, 2011, 23.
Citation:
liang qinjin, shi xiaoyan, pan wenwu. High voltage semiconductor fast ionization device and its properties of pulse compression[J]. High Power Laser and Particle Beams, 2011, 23.
The special structure and working principle of all-solid-state fast ionization device(FID) are studied. The compression characteristics in pulse voltage amplitude and pulse width of FID are given through experiment study at different exterior bias voltages. The experimental result of transforming the input pulse of voltage 1.7 kV, width 4 μs, repetition frequency 2 kHz into the output pulse of voltage 1 985 V, width 90 ns, repetition frequency 2 kHz is obtained from FID compression under 50 Ω load.
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