Volume 16 Issue 02
Feb.  2004
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zhang guo ping, zhang tan xin, zheng wu di. Theoretical designs of 19.6nm Nelike Ge XRL source[J]. High Power Laser and Particle Beams, 2004, 16.
Citation: zhang guo ping, zhang tan xin, zheng wu di. Theoretical designs of 19.6nm Nelike Ge XRL source[J]. High Power Laser and Particle Beams, 2004, 16.

Theoretical designs of 19.6nm Nelike Ge XRL source

  • Publish Date: 2004-02-15
  • 19.6nm Nelike Ge Xray laser (XRL) can be used as a source to diagnose RayleighTaylor instability in laser induced plasma. In this paper, systemic optimum designs and theoretical analysis to Nelike Ge XRL driven by premain short pulses were conducted by a series of codes, which had been tested by experiments. Simulation results show that, adopting driven conditions of 2%~3% prepulse , 6~8ns premain pulse interval and 40TW/cm2 power intensity,a gain area of 19.6nm laser line beyond 60μm and gain duration of 90ps can be obtained. Furthermore, with 16mm plane target, the gain gets to 11.8/cm, and if 6mrad/cm curved target is adopted, it reaches to 13.3/cm, and small signal gainlength product gainlength product of single target is about 21.3, which means that saturated gain
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      沈阳化工大学材料科学与工程学院 沈阳 110142

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