A design and simulation for fast corrector magnet power supply
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摘要: 快校正磁铁电源是光源和加速器中重要的设备。随着光源性能的提升，加速器对快校正磁铁电源的性能也提出了更高要求。为满足快校正磁铁电源性能要求和简化设计过程，开展了快校正电源控制策略和仿真研究，并提出了PI控制加二阶相位补偿的方法作为快校正磁铁电源的控制策略；利用伯德图设计快校正磁铁电源的相位补偿参数，以提高电源系统相位裕量。该方法不仅保证了电源系统工作在深度负反馈状态，而且简化了相位补偿的参数计算过程。为了验证控制策略的正确性和有效性，本文提出用压控电压源代替开关器件开展电源性能仿真的方法。仿真结果验证了上述控制策略的可行性和有效性，同时验证了上述仿真方法的有效性和高效性。Abstract: The power supply for fast corrector is an important type of equipment in light sources and accelerators. With the improvement of the performance of the light source, the accelerator has put forward higher requirements for the performance of the fast corrector and their corresponding power supply. In order to meet the requirements of the power supply for fast corrector and simplify their design process, the research of control strategy and simulation about power supply for the fast corrector are developed. This paper proposed a way which use the PI control plus second-order phase compensation as the control strategy of the power supply for fast corrector. For improving the phase margin of the power supply system, the bode diagram is used to design the phase compensation parameters of the power supply fast corrector. This method not only ensures that the power supply system works in the deep negative feedback state, but also simplifies the process of parameter calculation about phase compensation. For the sake of verifying the correctness and effectiveness of the control strategy, this paper proposes a simulation method based on the transfer function of switching power supply which uses voltage controlled voltage source instead of switching devices. The simulation results verify the feasibility and effectiveness of the above control strategies, and verify the effectiveness and efficiency of the above simulation methods.
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图 5 两种仿真模型斜坡信号响应及偏差
Figure 5. response of ramping signal and deviation based on two models of simulation
表 1 电源设计参数
Table 1. Design parameters of power supply
current/A magnet inductance/μH magnet resistance/mΩ bandwidth/kHz output ripple ±15 30 30 2 10−4 
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表 2 仿真参数
Table 2. parameters of simulation
Ui/V Lm/μH Rm/mΩ f /kHz L1，L2/μH C/μF f1/Hz f3/kHz f4/kHz Kp m 1 30 30 200 5 30 350 22 220 2000 1
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表 3 输出电流纹波测试结果
Table 3. Test results of output current ripple based on simulation
current setting/A ripple peak/μA stability/10−6 15 140 9.33 10.5 230 15.33 7.5 275 18.33 4.5 320 21.33 1.5 325 21.67 −1.5 325 21.67 −4.5 310 20.67 −7.5 275 18.33 −10.5 230 15.33 −15 135 9.00
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表 4 关键仿真事件统计
Table 4. the statistics of key simulation events
model solver average
step sizetotal
stepsrun
time/srun/sim
time
ratiozero
crossing
sourcezero crossing
source
triggeredtotal
zero
crossingtotal
solver
resettotal
solver
exceptionerror
controlCVS+delay auto(ode45) 9.74E-07 307937 2.95 9.84 2 1 6430 6431 0 0 CVS auto(ode45) 9.65E-07 310856 7.9 26.34 2 2 6648 6649 2 2 MOSFET+PWM auto(ode23tb) 9.76E-09 30727523 492.37 1641.25 12 8 480019 480016 0 0 MOSFET+PWM
+delayauto(ode23tb) 9.79E-09 30654829 497.68 1658.93 12 5 498466 498464 0 0
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