A 320 GHz frequency tripler based on face-to-face differential structure
-
摘要: 结合高频特性下肖特基二极管有源区电气模型建模方法，实现了一种基于对差分结构的320 GHz三倍频器，相比于传统的平衡式和非平衡式电路，这种结构可以在降低工艺复杂度的同时使电路的功率容量增加一倍，更好地满足现代通信系统对大功率太赫兹频率源的需求。为了提高电路在高耗散功率下的仿真精度，使用符号定义器件在电路仿真软件中建立起新型的电-热自适应模型，最后按照场路结合的迭代方式完成整体电路设计。测试结果表明设计的三倍频器在123～200 mW的驱动功率下可以实现最高8.8%的转换效率，最大输出功率为17.27 mW；在305～384 mW的驱动功率下可以实现最高7.2%的转换效率，最大输出功率为27.33 mW，为高功率太赫兹器件的高效设计提供了有益借鉴。Abstract: A 320 GHz balanced frequency tripler based on face-to-face differential configuration has been demonstrated without any on-chip capacitor. The proposed circuit could increase the power handling by a factor of two compared to the traditional balanced ones without any decline in efficiency. To improve the simulation accuracy under high dissipated power level, an accurate self-consistent electro-thermal model has been implemented using the symbolically defined device (SDD) component during the harmonic balance simulation. The fabricated tripler has proved that driven by powers ranging from 123 to 200 mW, the maximum output power and conversion efficiency can be 17.27 mW and 8.8% at 309.6 GHz, respectively. Moreover, the tripler reaches a peak output power of 27.33 mW with 7.2% conversion efficiency when driven from 305 to 384 mW. This configuration manifests a prospective solution for high-power multipliers, facilitating the application in various fields such as terahertz high-speed communication, radar imaging, and astronomical observation in the future.
-
Key words:
- face to face differential structure /
- frequency tripler /
- THz /
- power capability /
- Schottky diode
-
图 2 320GHz三倍频器的肖特基二极管模型及其核心电路
Figure 2. Schottky barrier diode model and the core circuit of the 320GHz balanced tripler
图 3 直流低通滤波器结构及其仿真结果
Figure 3. Structure and simulation result of the DC lowpass filter
图 4 E面Y型波导及其幅相特性
Figure 4. E-plane Y-junction waveguide and its amplitude and phase properties
图 5 对称性E面探针结构及其嵌入阻抗性能
Figure 5. Structure and embedded impedance performance of symmetrical E-plane probe
图 6 E面T型差分合成探针结构及其相位仿真性能
Figure 6. E-plane T-probe-based differential combining structure with related phase performance
图 7 对差分式三倍频电路整体结构
Figure 7. Complete architecture of the tripler based on the face-to-face differential structure
图 8 装配模块外部结构及其下腔体装配细节
Figure 8. External structure and lower cavity assembly details of the fabricated module
图 10 输入功率曲线以及在不同输入功率、不同偏置电压下的测试结果
Figure 10. Input power curves and measurement results in different input power and bias
-
[1] Hjalmarson Å. New astronomy with the Odin satellite[J]. Advances in Space Research, 2004, 34(3): 504-510. doi: 10.1016/j.asr.2003.05.024 [2] Waters J W, Froidevaux L, Harwood R S, et al. The Earth Observing System Microwave Limb Sounder (EOS MLS) on the Aura satellite[J]. IEEE Transactions on Geoscience and Remote Sensing, 2006, 44(5): 1075-1092. doi: 10.1109/TGRS.2006.873771 [3] Cooper K B, Dengler R J, Llombart N, et al. Penetrating 3-D imaging at 4- and 25-m range using a submillimeter-wave radar[J]. IEEE Transactions on Microwave Theory and Techniques, 2008, 56(12): 2771-2778. doi: 10.1109/TMTT.2008.2007081 [4] Gehrz R D, Becklin E E. The Stratospheric Observatory for Infrared Astronomy (SOFIA)[C]//Proceedings of SPIE 7012, Ground-based and Airborne Telescopes II. 2008: 70121R. [5] Cooper K B, Reck T A, Jung-Kubiak C, et al. Transceiver array development for submillimeter-wave imaging radars[C]//Proceedings of SPIE 8715, Passive and Active Millimeter-Wave Imaging XVI. 2013: 87150A. [6] Siegel P H. Terahertz technology[J]. IEEE Transactions on Microwave Theory and Techniques, 2002, 50(3): 910-928. doi: 10.1109/22.989974 [7] Erickson N R, Rizzi B J, Crowe T W. A high power doubler for 174 GHz using a planar diode array[C]//Fourth International Symposium on Space Terahertz Technology. 1993: 287-296. [8] Maestrini A, Ward J S, Gill J J, et al. A 540-640-GHz high-efficiency four-anode frequency tripler[J]. IEEE Transactions on Microwave Theory and Techniques, 2005, 53(9): 2835-2843. doi: 10.1109/TMTT.2005.854174 [9] Siles Perez J V, Chattopadhyay G, Lee C, et al. On-chip power-combining for high-power schottky diode based frequency multipliers: 9143084B2[P]. 2015-09-22. [10] Siles J V, Jung-Kubiak C, Reck T, et al. A dual-output 550 GHz frequency tripler featuring ultra-compact silicon micromachining packaging and enhanced power-handling capabilities[C]//Proceedings of the 45th European Microwave Conference. 2015: 845-848. [11] Pascual E, Rengel R, Martin M J. Monte Carlo analysis of tunneling and thermionic transport in a reverse biased Schottky diode[C]//Spanish Conference on Electron Devices. 2007: 108-111. [12] Tang A Y, Drakinskiy V, Yhland K, et al. Analytical extraction of a Schottky diode model from broadband S-parameters[J]. IEEE Transactions on Microwave Theory and Techniques, 2013, 61(5): 1870-1878. doi: 10.1109/TMTT.2013.2251655 [13] Tang A Y, Schlecht E, Lin R, et al. Electro-thermal model for multi-anode Schottky diode multipliers[J]. IEEE Transactions on Terahertz Science and Technology, 2012, 2(3): 290-298. doi: 10.1109/TTHZ.2012.2189913 [14] Tang A Y. Modelling of terahertz planar Schottky diodes[D]. Göteborg: Chalmers University of Technology, 2011. [15] Stake J, Dillner L, Jones S H, et al. Effects of self-heating on planar heterostructure barrier varactor diodes[J]. IEEE Transactions on Electron Devices, 1998, 45(11): 2298-2303. doi: 10.1109/16.726644 [16] Tian Yaoling, Huang Kun, He Yue, et al. A novel balanced frequency tripler with improved power capacity for submillimeter-wave application[J]. IEEE Microwave and Wireless Components Letters, 2021, 31(8): 925-928. doi: 10.1109/LMWC.2021.3084622 [17] Tian Yaoling, Liu Ge, Li Li, et al. High efficiency 285 GHz tripler based on face-to-face differential configuration[J]. Journal of Infrared and Millimeter Waves, 2022, 41(4): 739-744. [18] Maestrini A, Ward J S, Tripon-Canseliet C, et al. In-phase power-combined frequency triplers at 300 GHz[J]. IEEE Microwave and Wireless Components Letters, 2008, 18(3): 218-220. doi: 10.1109/LMWC.2008.916820 [19] Guo Jian, Xu Zhengbin, Qian Cheng, et al. A novel balanced frequency tripler for millimeter-wave and submillimeter-wave application[C]//IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications. 2012: 1-4. [20] Li Yuhang, Zhang Dehai, Meng Jin, et al. 335 GHz unbalanced Schottky diode frequency tripler[J]. Journal of Infrared and Millimeter Waves, 2023, 42(2): 229-233. -
下载:
点击查看大图
计量
- 文章访问数: 229
- HTML全文浏览量: 94
- PDF下载量: 34
- 被引次数: 0
