Background SiC-based light-initiated multi-gate semiconductor switches (LIMS) deliver superior response speeds due to the faster injection of photo-generated carriers compared to conventional electrically injected carriers. They can be used in a variety of applications, including radars, accelerators, and pulse sources.
Purpose Regarding the problems such as the long falling edge and slow turn-off speed of LIMS, an anode structure design with turn-off capability is proposed.
Methods The model and its parameters are calibrated based on experimental data, and the simulation is used to study the conduction characteristics of devices with a turn-off anode structure.
Results The simulation results show that devices with a turn-off anode structure can achieve positive feedback in the pnpn configuration following laser activation, thereby increasing the conduction current. When the laser pulse ends, the recombination of photo-generated carriers and the extraction of carriers from the base region by the turn-off anode structure significantly enhance the turn-off speed of the device.
Conclusions With a 4 kV anode bias and a peak current of several hundred amperes, the modified LIMS reduces the full-width-at-half-maximum of the current pulse from 0.79 µs to below100 ns and shortens the turn-off time to 0.6 µs. These results indicate suitability for repetitive operation at kilohertz frequencies and above.
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