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脉冲变压器驱动SiC MOSFET型Marx同步特性

江进波 陈锐 赵青 马可 姚延东 陈桂丰

江进波, 陈锐, 赵青, 等. 脉冲变压器驱动SiC MOSFET型Marx同步特性[J]. 强激光与粒子束, 2023, 35: 085002. doi: 10.11884/HPLPB202335.230108
引用本文: 江进波, 陈锐, 赵青, 等. 脉冲变压器驱动SiC MOSFET型Marx同步特性[J]. 强激光与粒子束, 2023, 35: 085002. doi: 10.11884/HPLPB202335.230108
Jiang Jinbo, Chen Rui, Zhao Qing, et al. Synchronous characteristics of SiC MOSFET driven by pulse transformer for Marx generator[J]. High Power Laser and Particle Beams, 2023, 35: 085002. doi: 10.11884/HPLPB202335.230108
Citation: Jiang Jinbo, Chen Rui, Zhao Qing, et al. Synchronous characteristics of SiC MOSFET driven by pulse transformer for Marx generator[J]. High Power Laser and Particle Beams, 2023, 35: 085002. doi: 10.11884/HPLPB202335.230108

脉冲变压器驱动SiC MOSFET型Marx同步特性

doi: 10.11884/HPLPB202335.230108
基金项目: 国家自然科学基金项目(51707105);强脉冲辐射环境模拟与效应全国实验室专项经费资助项目 (SKLIPR2008)
详细信息
    作者简介:

    江进波,jinbojiang@163.com

  • 中图分类号: TM46

Synchronous characteristics of SiC MOSFET driven by pulse transformer for Marx generator

  • 摘要: 为实现全固态Marx发生器中多个SiC MOSFET开关的同步驱动,设计了一种基于脉冲变压器的驱动控制电路。多路驱动信号的同步性会影响到Marx发生器的输出波形参数,因此要求驱动信号具有快脉冲前沿、低抖动特点。根据SiC MOSFET驱动原理及要求,分析了SiC MOSFET驱动电路脉冲前沿的影响因素,分析计算其相关参数,进行仿真模拟验证。设计了共初级穿芯10级串联的脉冲变压器,初次级的匝数分别为1匝和9匝,次级经正负脉冲信号调理电路后驱动10级Marx电路。实测结果表明利用脉冲变压器原边漏感与谐振电容构成的谐振电路在断续模式下,驱动功率越大,脉冲前沿越快且同步性越好。该同步驱动电路的脉冲前沿为112 ns,脉宽1~10 μs可调,频率10~25 kHz可调,满足固态Marx发生器参数调整需求。
  • 图  1  驱动电路原理图

    Figure  1.  Drive circuit schematic diagram

    图  2  TL494芯片控制电路

    Figure  2.  TL494 chip control circuit

    图  3  不同电源电压下仿真驱动波形

    Figure  3.  Simulated driving waveforms at different DC supply

    图  4  对应时刻的驱动电流波形

    Figure  4.  Driving current waveforms at corresponding time

    图  5  不同电源电压下驱动波形

    Figure  5.  Driving waveforms at different DC supply

    图  6  对应时刻的谐振电流与IGBT驱动波形

    Figure  6.  Resonant current and IGBT driving waveforms at corresponding time

    图  7  0.9 μF/11 μH下10路SiC MOSFET驱动波形

    Figure  7.  10-way SiC MOSFET driving waveforms at 0.9 μF/11 μH

    图  8  10 μF/ 1 μH下10路SiC MOSFET驱动波形

    Figure  8.  10-way SiC MOSFET driving waveforms at 10 μF/1 μH

    图  9  不同脉宽下的驱动波形

    Figure  9.  Driving waveforms at different pulse widths

    图  10  不同频率下的驱动波形

    Figure  10.  Driving waveforms at different frequencies

    图  11  10路SiC MOSFET驱动电路实验平台

    Figure  11.  10-way SiC MOSFET drive circuit experimental platform

    图  12  不同重复频率下输出的10 kV脉冲电压波形

    Figure  12.  Voltage waveforms of 10 kV pulses at different frequencies

    图  13  不同脉宽下输出的10kV电压波形

    Figure  13.  Waveforms of 10 kV output voltage with different pulse widths

    图  14  脉宽5 μs下输出的不同电压波形

    Figure  14.  Different output voltage waveforms at pulse width of 5 μs

    表  1  四种不同磁芯材料特性比较

    Table  1.   Comparison of the properties of four different magnetic materials

    materialinitial permeability/(H·m−1)saturation flux density/Telectrical resistivity/(μΩ·cm)coercive force/(A·m−1)
    Mn-Zn ferrite3×1030.55×1078.0
    cobalt-based amorphous1×1050.581400.4
    iron-based amorphous5×1031.561302.4
    iron-based nanocrystals8×1041.251151.2
    下载: 导出CSV

    表  2  SiC MOSFET的特性参数

    Table  2.   Characteristic parameters of SiC MOSFET

    drain-source voltage/Vdrain current/Ainput capacitance/pFresistive switching time/nson-time resistance/mΩ
    170072367265(turn-on delay)
    20(rise time)
    70
    下载: 导出CSV
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出版历程
  • 收稿日期:  2023-04-27
  • 修回日期:  2023-06-17
  • 录用日期:  2023-06-06
  • 网络出版日期:  2023-06-28
  • 刊出日期:  2023-08-15

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