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快速关断半导体开关工作特性及实验研究

王淦平 李飞 金晓 宋法伦 张琦

王淦平, 李飞, 金晓, 等. 快速关断半导体开关工作特性及实验研究[J]. 强激光与粒子束, 2020, 32: 025014. doi: 10.11884/HPLPB202032.190298
引用本文: 王淦平, 李飞, 金晓, 等. 快速关断半导体开关工作特性及实验研究[J]. 强激光与粒子束, 2020, 32: 025014. doi: 10.11884/HPLPB202032.190298
Wang Ganping, Li Fei, Jin Xiao, et al. Study of ultrafast semiconductor opening switch[J]. High Power Laser and Particle Beams, 2020, 32: 025014. doi: 10.11884/HPLPB202032.190298
Citation: Wang Ganping, Li Fei, Jin Xiao, et al. Study of ultrafast semiconductor opening switch[J]. High Power Laser and Particle Beams, 2020, 32: 025014. doi: 10.11884/HPLPB202032.190298

快速关断半导体开关工作特性及实验研究

doi: 10.11884/HPLPB202032.190298
基金项目: 国家高技术研究计划项目;装备预研重点实验室基金项目
详细信息
    作者简介:

    王淦平(1983—),男,博士研究生,副研究员,主要从事脉冲功率技术研究;wanggpcaep@163.com

  • 中图分类号: TN62

Study of ultrafast semiconductor opening switch

  • 摘要: 介绍了快速关断半导体开关(DSRD)的工作原理,研究了开关内部的物理过程,分析了系统参数对开关输出特性的影响,研究发现:基区材料的击穿阈值越高、载流子饱和漂移速度越大输出电压上升速率越快;基区高的电场击穿阈值或低的掺杂浓度会增加器件关断时间和最大工作电压;考虑各参数的影响,基于高击穿阈值的DSRD是实现快脉冲输出的理想器件;缩短正向泵浦时间可有效抑制预脉冲,当正向泵浦时间小于200 ns时,输出脉冲波形基本不变;为了获得理想的脉冲前沿,反向电流应在达到峰值时完成对注入电荷的抽取。设计了单前级开关的DSRD泵浦电路,研制了基于DSRD的快脉冲产生系统,输出脉冲前沿约4 ns,电压约8 kV,电压上升速率约2 kV/ns,满足FID开关器件对触发电压的要求。
  • 图  1  DSRD内部载流子变化

    Figure  1.  Sketches of electric field and plasma concentration profiles during the opening process

    图  2  不同正向泵浦时间下的输出脉冲波形

    Figure  2.  Output voltage under different forward current pumping time

    图  3  反向电流峰值对输出脉冲的影响

    Figure  3.  Output voltage under different backward current amplitude

    图  4  反向电流上升时间对输出脉冲的影响

    Figure  4.  Output voltage under different backward current rise time

    图  5  基于DSRD的脉冲发生器电路结构

    Figure  5.  Circuit structure of DSRD-based pulse generator

    图  6  仿真结果

    Figure  6.  Simulation results

    图  7  负载输出电压波形

    Figure  7.  Output voltage waveform

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    Fang Xu, Ding Zhenjie, Hao Qingsong, et al. Study on generation of drift step diodes for sub-nanosecond switching and high repetition rate operation//The 4th China Pulse Power Conference. 2015
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出版历程
  • 收稿日期:  2019-08-14
  • 修回日期:  2019-10-29
  • 刊出日期:  2019-12-26

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