KDP类晶体的激光损伤研究

赵元安; 连亚飞; 李婷; 彭小聪; 王岳亮; 吴金明; 常俊秀; 胡国行; 邵建达

doi:10.11884/HPLPB202335.220417

KDP类晶体的激光损伤研究

doi: 10.11884/HPLPB202335.220417

赵元安^{1, 2, 3,},
连亚飞^{1, 3},
李婷^{1, 3},
彭小聪^{1, 3},
王岳亮^{1, 3},
吴金明^{1, 3},
常俊秀^{1, 3},
胡国行^{1, 3},
邵建达^{1, 2, 3}

1.
中国科学院上海光学精密机械研究所薄膜光学实验室，上海 201800
2.
中国科学院大学材料与光电研究中心，北京 100049
3.
中国科学院强激光材料重点实验室，上海 201800

详细信息

作者简介:
赵元安，yazhao@siom.ac.cn

中图分类号: O436
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- 被引次数: 0
出版历程
- 收稿日期: 2022-12-21
- 修回日期: 2023-03-16
- 录用日期: 2023-02-27
- 网络出版日期: 2023-03-24
- 刊出日期: 2023-06-15

Laser damage of KDP crystals and their analogues

Zhao Yuanan^{1, 2, 3
,},
Lian Yafei^{1, 3},
Li Ting^{1, 3},
Peng Xiaocong^{1, 3},
Wang Yueliang^{1, 3},
Wu Jinming^{1, 3},
Chang Junxiu^{1, 3},
Hu Guohang^{1, 3},
Shao Jianda^{1, 2, 3}

1.
Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
2.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3.
Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

摘要

摘要:
KDP类晶体是唯一可以满足ICF激光驱动装置通光口径的非线性光学晶体材料。该类晶体采用水溶液生长法生长，易于产生宏观包裹体和微观晶格缺陷，在高功率激光辐照下晶体内部易产生高密度pinpoint损伤现象，这与其他方法生长的晶体只是受限于光学加工的表面损伤问题相比具有明显不同。KDP类晶体内部的缺陷或前驱体诱导激光损伤与晶体切向、激光波长及偏振方向等密切相关，使得应用于ICF激光驱动器中不同光学功能的、来源于同一晶坯的不同晶体元件也表现出损伤性能的差异性，因此其损伤机理非常复杂，迫切需要认识该类晶体的激光损伤机理问题。回顾了上海光学精密机械研究所联合福建物质结构研究所、山东大学等晶体研制单位联合开展的关于KDP类晶体激光诱导损伤特性的研究工作，进行了用于光开关、倍频以及混频等功能的KDP和不同氘含量DKDP晶体的激光损伤研究，指导了晶体生长工艺优化和过程关键因素控制，并对仍存在的问题及解决方案进行了展望，对于高性能KDP类晶体的研制以及在高功率激光系统中的合理应用具有参考价值。
- KDP类晶体 /
- 激光损伤 /
- 缺陷 /
- 激光损伤前驱体 /
- 热吸收 /
- 非线性吸收 /
- 激光预处理
Abstract:
KDP-family crystals are the only nonlinear optical crystal material according with the optical aperture of ICF laser drivers. As KDP-family crystals are grown by aqueous solution method, the macroscopic inclusions and microscopic lattice defects easily occur in the bulk of the crystals. The high density pinpoints damage phenomenon appears as they are irradiated by the high power laser. All the laser induced damage properties are different from the surface damage of crystals grown by other methods, which are only limited by optical processing. The laser induced damage by defects or precursors are related to the laser wavelengths and even the laser polarization direction, and the different samples from the same as-grown single crystal and applied to different optical functions in ICF laser drivers show different laser induced damage properties. Therefore, the damage mechanism is very complicated, and it is urgent to know the laser induced damage mechanism of KDP-family crystals. In this paper, the cooperated research of Shanghai Institute of Optics and Mechanics with Fujian Institute of Research on the Structure of Matter, Shandong University and other crystal research institutes is reviewed. The laser induced damage properties of KDP and DKDP crystals applied as optical switching, frequency doubling and frequency mixing optical elements were investigated. The optimization of crystal growth process and the control of key factors were guided and the existing problems and solutions were prospected. The research has reference value for the development of high-performance KDP-family crystals and their rational application in high-power laser systems
- KDP-family crystals /
- laser induced damage /
- defect /
- precursor /
- thermal absorption /
- nonlinear absorption /
- laser conditioning

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图 1 1064 nm激光辐照下Z切KDP晶体体内的损伤点形貌

Figure 1. Damage point morphology in Z-cut KDP crystal irradiated by 1064 nm laser

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图 2 1064 nm激光诱导高氘DKDP晶体体内典型损伤点形貌^[64]

Figure 2. Damage morphologies of Z-cut sample induced by 1064 nm laser^[64]

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图 3 KDP晶体及高氘DKDP晶体的透过率光谱^{[64, 66]}

Figure 3. Transmittance spectrum of KDP and highly-deuterated DKDP crystals^{[64, 66]}

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图 4 98%氘含量DKDP晶体的R-on-1激光诱导损伤概率曲线^[64]

Figure 4. Laser-induced damage results of 98% deuterium DKDP crystals in R-on-1 method^[64]

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图 5 连续过滤技术用于提升KDP晶体抗激光损伤能力^[8]

Figure 5. Laser damage resistance enhancement of KDP crystals by continuous filtration techniques^[8]

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图 6 不加连续过滤(NCF)、0.1 μm滤孔一级过滤(SCF)、0.1 μm和0.03 μm滤孔二级过滤(TCF)样品的损伤几率^[35]

Figure 6. Laser damage probability curves for KDP samples grown with no filter (NCF), only 0.1 μm filter (SCF) and two levels of filter (0.1 μm and 0.03 μm) (TCF) in continuous filtration unit^[35]

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图 7 KDP晶体中损伤前驱体的阈值分布及尺度分布^[35]

Figure 7. Laser induced damage thresholds (LIDTs) and sizes of laser damage precursors in KDP crystals^[35]

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图 8 不同脉宽三倍频激光（7.6 ns和500 ps）预处理DKDP晶体后的阈值变化

Figure 8. Laser induced damage threshold changes of DKDP crystals by laser conditioning of 355nm laser with different pulse widths (7.6 ns and 500 ps)

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图 9 Ⅱ类DKDP晶体在三倍频纳秒激光预处理过程中暗场观察损伤点产生、355 nm透过率变化以及损伤点密度增长结果^[75]

Figure 9. Dark field observation of the generation of damage spots, the change of transmittance at 355 nm and the increase of density of damage spots in Ⅱ-type DKDP crystals during the 355 nm laser conditioning process^[75]

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图 10 不同激光预处理获得样品的Z扫描测量结果^[37]

Figure 10. Z-scan measurement results of samples after different laser conditioning^[37]

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图 11 DKDP晶体在355 nm激光作用下价带电子离化示意图^[37]

Figure 11. Schematic diagram of valence band electron ionization of DKDP crystal under 355 nm laser

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图 12 200 J·cm⁻² (7.6 ns, 355 nm)经过纯3PA (实线)过程和15 J·cm⁻²(7.6 ns, 355 nm)经过缺陷辅助3PA (点划线)过程引起的导带电子数密度随时间变化^[37]

Figure 12. Time-varying number density of conduction band electrons caused by pure 3PA (solid line) process at 200 J·cm⁻² (7.6 ns, 355 nm) and defect-assisted 3PA (dotted line) process at 15 J·cm⁻² (7.6 ns, 355 nm)^[37]

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图 13 晶体元件激光预处理装置^[89]

Figure 13. Laser conditioning platforms for large size DKDP crystals^[89]

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图 14 三倍频7.6 ns和500 ps脉冲激光预处理的阈值统计结果

Figure 14. Statistical results of LIDTs after laser conditioning of 355 nm laser with 7.6 ns and 500 ps

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图 15 四种波形变化的亚纳秒脉冲^[56]

Figure 15. Four types of temporally shaped sub-ns pulses^[56]

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图 16 时间波形亚纳秒激光预处理前后DKDP晶体R-on-1损伤概率曲线^[56]

Figure 16. R-on-1 damage probabilities in 8-ns Gaussian pulse, tested after laser conditioning with different temporally shaped pulses^[56]

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图 17 不同时间波形亚纳秒激光预处理后，DKDP晶体的纳秒激光（8 ns, F=23 J·cm⁻²）诱导损伤典型SEM形貌。 (a)-(e)图右上角为亚纳秒激光预处理条件，带有箭头的图像及插图均为光学显微镜下损伤点形貌^[56]

Figure 17. SEM images of typical damage morphology initiated with 8 ns and 23 J·cm⁻² laser. The laser conditioning parameters are marked in the upper right corners of (a)–(e). The two images with an arrow and the insets in (a)–(c) indicate the damage morphologies detected via the optical microscopy^[56]

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图 18 DKDP晶体氘化率与OPA参数之间关系^[98]

Figure 18. Relationship between the deuteration rate of DKDP crystal and the OPA paramaters^[98]

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图 19 高氘DKDP晶体的透过率光谱^[64]

Figure 19. Transmittance spectrum of the high deuterium DKDP crystals^[64]

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图 20 98%含氘量DKDP晶体的激光损伤概率（R-on-1测量方法）^[64]

Figure 20. Laser-induced damage results of high deuterium DKDP crystals in R-on-1 method^[64]

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表 1 高功率激光驱动器中的KDP类晶体元件^[8]

Table 1. KDP-family crystals in high power laser drivers

component function	phase matching angle and orientation angle (θ, φ)	deuterium content/%	application wavelength/nm (polarization direction)
switch	(0 º, 0 º)^[8]	0 or ＞90	1053 (o)^{[8, 57]}
second harmonic generation	(41 º, 45 º)^[8]	0	1053 (o), 527 (e)^{[8, 57]}
third harmonic generation	(61 º, 0 º)^{[8, 58]}	70	1053 (e), 527 (o), 351 (e)^{[8, 57]}

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表 2 不同1064 nm激光辐照方向及偏振方向下KDP晶体的激光诱导损伤阈值^[67]

Table 2. Laser-induced damage threshold of KDP crystal under different irradiation directions and polarization directions of 1064 nm laser^[67]

wavelength/nm	laser incident direction	laser polarization direction	laser induced damage threshold /(J·cm⁻²@1.1ns)
1064	a(b)	//c	11.7±0.5
	a(b)	⊥c	12.3±0.3
	c	// a(b)	23.0±1.0
	c	⊥a(b)	19.5±1.0

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表 3 不同滤孔生长的 KDP晶体中损伤前驱体的信息^[35]

Table 3. Information of the laser damage precursors for KDP crystals grown with differently sized filter pores^[35]

sample	ρ₀/(mm⁻³)	T₀/(J·cm⁻²)	ΔT/(J·cm⁻²)
NCF	3.75	24.8	10.5
SCF	2.59	33.3	14.6
TCF	0.42	81.4	41.3

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表 4 不同三种处理方式样品的4PA系数^[37]

Table 4. 4PA coefficient of samples of the three different samples^[37]

sample	γ /(10⁻⁶ cm⁵·GW⁻³)
pristine	4.90±0.99
ns laser conditioned	4.81±1.37
sub-ns laser conditioned	2.53±0.98

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