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C波段光阴极微波电子枪的束流测量系统

黄蔚玲 杨仁俊 李芳 刘仁洪 陆志军 邱瑞阳 杨涛 姜世民 陈伟文 曾磊 杨瑞 马娜 王一刚 徐智虹 李晓

黄蔚玲, 杨仁俊, 李芳, 等. C波段光阴极微波电子枪的束流测量系统[J]. 强激光与粒子束, 2026, 38: 044002. doi: 10.11884/HPLPB202638.250340
引用本文: 黄蔚玲, 杨仁俊, 李芳, 等. C波段光阴极微波电子枪的束流测量系统[J]. 强激光与粒子束, 2026, 38: 044002. doi: 10.11884/HPLPB202638.250340
Huang Weiling, Yang Renjun, Li Fang, et al. Beam diagnostics of a C-band photocathode RF gun[J]. High Power Laser and Particle Beams, 2026, 38: 044002. doi: 10.11884/HPLPB202638.250340
Citation: Huang Weiling, Yang Renjun, Li Fang, et al. Beam diagnostics of a C-band photocathode RF gun[J]. High Power Laser and Particle Beams, 2026, 38: 044002. doi: 10.11884/HPLPB202638.250340

C波段光阴极微波电子枪的束流测量系统

doi: 10.11884/HPLPB202638.250340
基金项目: 国家自然科学基金项目(12275294);广东省基础与应用基础研究基金项目(2022A1515140179)
详细信息
    作者简介:

    黄蔚玲,huangwei@ihep.ac.cn

    通讯作者:

    杨仁俊,yangrenjun@ihep.ac.cn

  • 中图分类号: TL506+

Beam diagnostics of a C-band photocathode RF gun

  • 摘要: C波段光阴极微波电子枪凭借超高加速梯度(>150 MV/m),成为第四代光源获取高亮度电子束的核心技术路线。然而,其输出束流具有ps级超窄脉冲、大动态范围电荷量(50~2500 pC)及极低横向发射度0.18 mm·mrad@100 pC,现有基于L/S波段的测量手段难以满足其测量精度与带宽要求。为此,本文依托针南方先进光源(SAPS)测试平台,研制了一套适配C波段电子枪特性的高精度束流测量系统。针对窄脉冲电荷测量难题,自主研制了法兰式有源积分型电荷探测器(Active-ICT),提出基于商用高灵敏度探头的交叉标定方法,实现了优于±1% FS的测量线性度;针对极小发射度测量中空间电荷力影响显著的问题,通过Astra模拟优化了双缝发射度仪的狭缝参数与漂移距离,在0.15~0.25 mm·mrad范围内将系统误差控制在10%以内;为解决能散测量中的噪底干扰,设计了双缝准直结合扇形二极铁的能散测量光路。利用该系统开展了初步束流实验,结果表明:光电流与暗电流测量结果与法拉第筒吻合良好,不同加速梯度下的束流能量测量曲线与动力学模拟高度一致,验证了测量系统的可靠性与测量精度。本研究工作解决了国内C波段光阴极微波电子枪调试中的关键束诊技术难题,为同类高梯度注入器的工程研制提供了核心技术支撑。
  • 图  1  C 波段光阴极微波电子枪束流诊断光束线束测设备布局图

    Figure  1.  Beam diagnostics layout of the C-band RF electron gun with a photocathode

    图  2  空气式ICT探头内部组成及等效电路[5,13]

    Figure  2.  ICT structure and equivalent circuit

    图  3  自研的两款法兰式ICT探头

    Figure  3.  Two sets of self-designed ICT sensors

    图  4  Bergoz标定器与带一匝校准线圈的ICT探头

    Figure  4.  Bergoz ICT sensor and calibrator

    图  5  Bergoz ICT探头与自研两款ICT探头的标定曲线和拟合公式

    Figure  5.  Calibration of Bergoz ICT sensor and two sets of self-designed ICT sensors

    图  6  双缝发射度仪工作原理

    Figure  6.  Principle of the double-slit emittancemeter

    图  7  双缝发射度仪

    Figure  7.  Double-slit emittancemeter

    图  8  双缝能散仪工作原理

    Figure  8.  Principle of the double-slit energy spread monitor

    图  9  Monte-Carlo模拟得到的能散测量系统电子通量二维分布

    Figure  9.  Monte-carlo simulation of the lectron flux distribution in the energy spread monitor

    图  10  第二缝出射的杂散电子能谱

    Figure  10.  Simulation of the stray electron energy spectrum at the second slit exit

    图  11  模拟的荧光靶成像及其剖面拟合结果

    Figure  11.  Simulation of the beam spot and profile at the YAG screen of double-slit beam energy spread monitor

    图  12  电子束法拉第筒结构示意图

    Figure  12.  Structure of the faraday cup in C-band photocathode electron gun test platform

    图  13  不同材料(铜、石墨、铝)收集体对应的背散射电子能谱

    Figure  13.  Back scattered electron spectrum in different materials (copper, graphite and aluminum)

    图  14  法拉第筒机械设计及加工成品

    Figure  14.  Mechanical structure design of the faraday cup

    图  15  C波段光阴极微波电子枪测试平台首套束流测量系统安装完成

    Figure  15.  Installation of the first beam instruments of C-band photocathode electron gun test platform

    图  16  利用法拉第筒(a)和带电子学法拉第筒(b)分别对电子枪暗电流的测量

    Figure  16.  Dark current measured by faraday cup without(a) / with (b) electronics

    图  17  利用ICT和FCT同时对光电流和暗电流进行测量的波形

    Figure  17.  Beam current waveforms of faraday cup and ICT with electronics

    图  18  不同加速相位下,利用ICT和FCT测量光电流电荷量的结果对比

    Figure  18.  Normalized photoelectron bunch charge measured by faraday cup and ICT under phase scanning

    图  19  不同加速梯度下,扫描加速相位对应的束流能量测量结果与仿真的对比

    Figure  19.  Beam energy measurements versus scanned acceleration phase under different accelerating gradients

    表  1  C波段光阴极微波电子枪束流参数[7]

    Table  1.   Beam parameters of the C-band RF electron gun with a photocathode

    Parameter Unit Value Parameter Unit Value
    RF frequency GHz 5.712 Bunch Charge (min.) pC 100
    Accelerating gradient MV/m 150 Transverse emittance mm-mrad 0.175
    Repetition rate Hz 1-100 Bunch length ps 5
    Beam energy at the gun exit MeV 7.3 Beam rms size μm 42.5
    下载: 导出CSV

    表  2  不同光电子束团电荷量对应的束流物理参数

    Table  2.   Beam parameters for different electron bunch charge

    bunch charge/pC normalized Emittance/(mm·mrad) RMS beam size/mm RMS beam spread/mrad energy/MeV
    100 0.175 0.0425 0.369 7.26
    300 0.323 0.0793 0.565 7.25
    500 0.463 0.112 0.792 7.24
    1000 0.845 0.215 1.27 7.22
    1500 1.16 0.297 1.64 7.19
    2000 1.36 0.379 1.88 7.11
    下载: 导出CSV

    表  3  ICT探头等效电路对应的参数值

    Table  3.   Beam parameters of the C-band RF electron gun with a photocathode

    symbol meaning value symbol meaning value
    IB beam current 20~400 A L3、L4 secondary leakage inductance negligible
    C1 capacitance in loop 2 20*180 pF R1 third leakage inductance negligible
    CL capacitance in loop 3 360 pF R2 equivalent resistance of toroid 1 1.75 Ω@100 kHz
    L1 inductance of toroid 1 4.86 μH RL equivalent resistance of toroid 2 33 Ω@100 kHz
    L2 inductance of toroid 2 121.5 μH N turns of toroid 2 5
    下载: 导出CSV

    表  4  不同电荷量对应的光电流束团参数

    Table  4.   Beam parameters of the C-band RF electron gun with a photocathode

    charge/pCbeam spot size/mmrepetition rate/Hzaverage power/mWpeak power/mWaverage intensity/nApeak intensity/A
    1000.610070144.0331020.576
    15002.5101052160.49415308.642
    25003.5101753600.82325514.403
    下载: 导出CSV

    表  5  不同材料(铜、石墨、铝)收集体背散射电子的逃逸概率

    Table  5.   Escape probability of the backscattered electrons for different materials (copper, graphite, aluminum)

    material escape possibility/% total possibility/%
    copper 0.863 ~1.0
    graphite 0.068 0.12
    aluminum 0.161 0.25
    下载: 导出CSV
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出版历程
  • 收稿日期:  2025-10-12
  • 修回日期:  2026-02-11
  • 录用日期:  2026-02-12
  • 网络出版日期:  2026-03-19
  • 刊出日期:  2026-03-20

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