Investigation of the performance of vertical extrinsic photoconductive switches based on nitrogen-doped diamond
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摘要: 金刚石优异的材料特性，认为是用作光导开关器件的理想候选材料。然而，金刚石光导开关器件暴露出导通电阻大及器件耐压低的问题。为提升金刚石光导开关的器件性能，采用不同氮掺杂浓度及厚度的单晶金刚石材料，并通过氮化硅材料钝化处理，制作了垂直结构的金刚石光导开关器件。通过表征手段获取了金刚石的掺杂浓度梯度。以波长为532 nm的激光作为触发源，在不同的直流偏置下获得了光导开关器件的开关响应特性。实验结果表明：氮掺杂金刚石光导开关器件均展现出优异的开关比（～1011），及亚纳秒量级的上升沿及下降沿性能。其中，氮掺杂浓度高的金刚石材料，其对应的光导开关器件导通电阻小。通过降低金刚石材料厚度，在偏压为4 kV（电场强度为110 kV/cm）下实现了光导开关器件导通电阻为28.9 Ω，对应的输出峰值功率为128 kW，进一步提升了器件性能。通过氮掺杂浓度设计、衬底厚度减薄及氮化硅钝化处理等，本工作成功制备了具有较好性能的金刚石光导开关器件，为金刚石光导开关器件的性能提升提供指导。Abstract:
Background Diamond is considered a promising candidate for photoconductive semiconductor switches (PCSSs) due to its exceptional material properties.Purpose However, the development of high-performance diamond PCSSs is primarily impeded by their high on-state resistance and relatively low breakdown voltage. This study aims to improve the performance of the diamond PCSSs.Methods Passivated with Si3N4, vertical PCSSs were fabricated using nitrogen-doped single-crystal diamonds with different doping concentrations and thicknesses. The doping concentrations of diamond samples were analyzed. The photoresponse of the PCSSs was characterized under 532 nm laser excitation over a range of DC bias voltages.Results The experimental results showed that the nitrogen-doped diamond PCSSs present a large on/off ratio (～1011) along with sub-nanosecond rise and fall times. Among them, the diamond PCSS device with the highest nitrogen doping concentration exhibited the minimum on-state resistance. By reducing material thickness, a peak output power of 128 kW was achieved at a bias voltage of 4 kV (corresponding to the electric field strength of 110 kV/cm), with the PCSS exhibiting an on-state resistance of 28.9 Ω, further improving the device performance.Conclusions Through the design of nitrogen doping concentration, reduction of substrate thickness, and application of Si3N4 passivation, this work successfully developed diamond PCSSs with good performance, paving the way for the development of high-performance diamond PCSSs. -
图 5 具有不同氮浓度及不同衬底厚度的金刚石光导开关器件性能
Figure 5. Performance of the diamond PCSSs with different nitrogen concentrations and different substrate thicknesses
表 1 氮掺杂金刚石光导开关的开关性能
Table 1. Switch performance of nitrogen-doped diamond PCSSs
No. Roff/TΩ Ron/Ω Roff/Ron switching time:on//ps switching time:on/ps Pout/kW 1# 9.3 321.6 2.9×1010 289 373 5.8 2# 9.1 52.9 1.7×1011 344 458 75.6 3# 11.1 28.9 3.8×1011 414 769 128.4 
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