Synchronous characteristics of SiC MOSFET driven by pulse transformer for Marx generator
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摘要: 为实现全固态Marx发生器中多个SiC MOSFET开关的同步驱动，设计了一种基于脉冲变压器的驱动控制电路。多路驱动信号的同步性会影响到Marx发生器的输出波形参数，因此要求驱动信号具有快脉冲前沿、低抖动特点。根据SiC MOSFET驱动原理及要求，分析了SiC MOSFET驱动电路脉冲前沿的影响因素，分析计算其相关参数，进行仿真模拟验证。设计了共初级穿芯10级串联的脉冲变压器，初次级的匝数分别为1匝和9匝，次级经正负脉冲信号调理电路后驱动10级Marx电路。实测结果表明利用脉冲变压器原边漏感与谐振电容构成的谐振电路在断续模式下，驱动功率越大，脉冲前沿越快且同步性越好。该同步驱动电路的脉冲前沿为112 ns，脉宽1～10 μs可调，频率10～25 kHz可调，满足固态Marx发生器参数调整需求。
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关键词:
- SiC MOSFET /
- 同步驱动 /
- 脉冲变压器 /
- 谐振 /
- 驱动功率
Abstract: To achieve synchronous driving of multiple SiC MOSFET switches in an all solid-state Marx generator, a drive control circuit based on a pulse transformer was designed. The synchronization of multiple drive signals can affect the output waveform parameters of the Marx generator, thus it is required that the drive signal have the characteristics of fast pulse front and low jitter. According to the driving principle and requirements of SiC MOSFET, the influencing factors of pulse front in SiC MOSFET driving circuit were analyzed, and its related parameters were calculated and simulated for verification. A pulse transformer with 10 primary core piercing stages in series was designed, with 1 turn for the primary and 9 turns for the secondary. The second stage was driven by a 10 stage Marx circuit after passing through a positive and negative pulse signal conditioning circuit. The actual measurement results indicate that the resonant circuit composed of the primary leakage inductance of the pulse transformer and the resonant capacitor in intermittent mode has higher driving power, faster pulse front, and better synchronization. The pulse front of the synchronous driving circuit is 112 ns, the pulse width is adjustable from 1 μs to 10 μs, and the frequency is adjustable from 10 kHz to 25 kHz, which can meet the adjustment requirements of solid-state Marx generator parameters.-
Key words:
- SiC MOSFET /
- synchronous drive /
- pulse transformer /
- resonance /
- driving power
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图 6 对应时刻的谐振电流与IGBT驱动波形
Figure 6. Resonant current and IGBT driving waveforms at corresponding time
图 7 0.9 μF/11 μH下10路SiC MOSFET驱动波形
Figure 7. 10-way SiC MOSFET driving waveforms at 0.9 μF/11 μH
图 8 10 μF/ 1 μH下10路SiC MOSFET驱动波形
Figure 8. 10-way SiC MOSFET driving waveforms at 10 μF/1 μH
图 11 10路SiC MOSFET驱动电路实验平台
Figure 11. 10-way SiC MOSFET drive circuit experimental platform
图 12 不同重复频率下输出的10 kV脉冲电压波形
Figure 12. Voltage waveforms of 10 kV pulses at different frequencies
图 13 不同脉宽下输出的10kV电压波形
Figure 13. Waveforms of 10 kV output voltage with different pulse widths
图 14 脉宽5 μs下输出的不同电压波形
Figure 14. Different output voltage waveforms at pulse width of 5 μs
表 1 四种不同磁芯材料特性比较
Table 1. Comparison of the properties of four different magnetic materials
material initial permeability/(H·m−1) saturation flux density/T electrical resistivity/(μΩ·cm) coercive force/(A·m−1) Mn-Zn ferrite 3×103 0.5 5×107 8.0 cobalt-based amorphous 1×105 0.58 140 0.4 iron-based amorphous 5×103 1.56 130 2.4 iron-based nanocrystals 8×104 1.25 115 1.2 
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表 2 SiC MOSFET的特性参数
Table 2. Characteristic parameters of SiC MOSFET
drain-source voltage/V drain current/A input capacitance/pF resistive switching time/ns on-time resistance/mΩ 1700 72 3672 65（turn-on delay）
20（rise time）70
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