Synchronous characteristics of SiC MOSFET driven by pulse transformer for Marx generator
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摘要: 为实现全固态Marx发生器中多个SiC MOSFET开关的同步驱动,设计了一种基于脉冲变压器的驱动控制电路。多路驱动信号的同步性会影响到Marx发生器的输出波形参数,因此要求驱动信号具有快脉冲前沿、低抖动特点。根据SiC MOSFET驱动原理及要求,分析了SiC MOSFET驱动电路脉冲前沿的影响因素,分析计算其相关参数,进行仿真模拟验证。设计了共初级穿芯10级串联的脉冲变压器,初次级的匝数分别为1匝和9匝,次级经正负脉冲信号调理电路后驱动10级Marx电路。实测结果表明利用脉冲变压器原边漏感与谐振电容构成的谐振电路在断续模式下,驱动功率越大,脉冲前沿越快且同步性越好。该同步驱动电路的脉冲前沿为112 ns,脉宽1~10 μs可调,频率10~25 kHz可调,满足固态Marx发生器参数调整需求。
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关键词:
- SiC MOSFET /
- 同步驱动 /
- 脉冲变压器 /
- 谐振 /
- 驱动功率
Abstract: To achieve synchronous driving of multiple SiC MOSFET switches in an all solid-state Marx generator, a drive control circuit based on a pulse transformer was designed. The synchronization of multiple drive signals can affect the output waveform parameters of the Marx generator, thus it is required that the drive signal have the characteristics of fast pulse front and low jitter. According to the driving principle and requirements of SiC MOSFET, the influencing factors of pulse front in SiC MOSFET driving circuit were analyzed, and its related parameters were calculated and simulated for verification. A pulse transformer with 10 primary core piercing stages in series was designed, with 1 turn for the primary and 9 turns for the secondary. The second stage was driven by a 10 stage Marx circuit after passing through a positive and negative pulse signal conditioning circuit. The actual measurement results indicate that the resonant circuit composed of the primary leakage inductance of the pulse transformer and the resonant capacitor in intermittent mode has higher driving power, faster pulse front, and better synchronization. The pulse front of the synchronous driving circuit is 112 ns, the pulse width is adjustable from 1 μs to 10 μs, and the frequency is adjustable from 10 kHz to 25 kHz, which can meet the adjustment requirements of solid-state Marx generator parameters.-
Key words:
- SiC MOSFET /
- synchronous drive /
- pulse transformer /
- resonance /
- driving power
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表 1 四种不同磁芯材料特性比较
Table 1. Comparison of the properties of four different magnetic materials
material initial permeability/(H·m−1) saturation flux density/T electrical resistivity/(μΩ·cm) coercive force/(A·m−1) Mn-Zn ferrite 3×103 0.5 5×107 8.0 cobalt-based amorphous 1×105 0.58 140 0.4 iron-based amorphous 5×103 1.56 130 2.4 iron-based nanocrystals 8×104 1.25 115 1.2 表 2 SiC MOSFET的特性参数
Table 2. Characteristic parameters of SiC MOSFET
drain-source voltage/V drain current/A input capacitance/pF resistive switching time/ns on-time resistance/mΩ 1700 72 3672 65(turn-on delay)
20(rise time)70 -
[1] 刘锡三. 高功率脉冲技术[M]. 北京: 国防工业出版社, 2005Liu Xisan. High pulsed power technology[M]. Beijing: National Defense Industry Press, 2005 [2] 郑建毅, 何闻. 脉冲功率技术的研究现状和发展趋势综述[J]. 机电工程, 2008, 25(4):1-4Zheng Jianyi, He Wen. Review of research actuality and development directions of pulsed power technology[J]. Mechanical & Electrical Engineering Magazine, 2008, 25(4): 1-4 [3] 孟志鹏, 张自成, 杨汉武, 等. 半导体开关在脉冲功率技术中的应用[J]. 中国物理C, 2008, 32(s1):277-279Meng Zhipeng, Zhang Zicheng, Yang Hanwu, et al. Applications of semiconductor switches in pulsed power technology[J]. Chinese Physics C, 2008, 32(s1): 277-279 [4] 梁琳, 颜小雪, 黄鑫远, 等. 半导体脉冲功率开关器件综述[J]. 中国电机工程学报, 2022, 42(23):8631-8651Liang Lin, Yan Xiaoxue, Huang Xinyuan, et al. Review on semiconductor pulsed power switching devices[J]. Proceedings of the CSEE, 2022, 42(23): 8631-8651 [5] Jayaram S H. Sterilization of liquid foods by pulsed electric fields[J]. IEEE Electrical Insulation Magazine, 2000, 16(6): 17-25. doi: 10.1109/57.887601 [6] 江伟华. 高重复频率脉冲功率技术及其应用: (6)代表性的应用[J]. 强激光与粒子束, 2014, 26:030201 doi: 10.3788/HPLPB20142603.30201Jiang Weihua. Repetition rate pulsed power technology and its applications: (VI) typical applications[J]. High Power Laser and Particle Beams, 2014, 26: 030201 doi: 10.3788/HPLPB20142603.30201 [7] Jiang Weihua, Sugiyama H, Tokuchi A. Pulsed power generation by solid-state LTD[J]. IEEE Transactions on Plasma Science, 2014, 42(11): 3603-3608. doi: 10.1109/TPS.2014.2358627 [8] Wang T W, Kao Y Y, Hung S H, et al. Monolithic GaN-Based driver and GaN switch with diode-emulated GaN technique for 50-MHz operation and sub-0.2-ns deadtime control[J]. IEEE Journal of Solid-State Circuits, 2022, 57(12): 3877-3888. doi: 10.1109/JSSC.2022.3200381 [9] Peftitsis D, Rabkowski J. Gate and base drivers for silicon carbide power transistors: an overview[J]. IEEE Transactions on Power Electronics, 2016, 31(10): 7194-7213. [10] 柏松, 李士颜, 杨晓磊, 等. 高压大功率碳化硅电力电子器件研制进展[J]. 科技导报, 2021, 39(14):56-62Bai Song, Li Shiyan, Yang Xiaolei, et al. Progress in developing high-voltage SiC power devices[J]. Science & Technology Review, 2021, 39(14): 56-62 [11] Song Xiaoqing, Huang A Q, Ni Xijun, et al. Comparative evaluation of 6kV Si and SiC power devices for medium voltage power electronics applications[C]//IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications. 2015: 150-155. [12] Manuel A, Gopinath D. A simulation study of SiC MOSFET characteristics and design of gate drive card using TLP250[C]//International Conference on Next Generation Intelligent Systems. 2016: 1-5. [13] Zhang Weiping, Zhang Liang, Mao Peng, et al. Analysis of SiC MOSFET switching performance and driving circuit[C]//IEEE International Power Electronics and Application Conference and Exposition. 2018: 1-4. [14] 张建忠, 吴海富, 张雅倩, 等. 一种SiC MOSFET谐振门极驱动电路[J]. 电工技术学报, 2020, 35(16):3453-3459Zhang Jianzhong, Wu Haifu, Zhang Yaqian, et al. A resonant gate driver for SiC MOSFET[J]. Transactions of China Electrotechnical Society, 2020, 35(16): 3453-3459 [15] Li Zi, Liu Haotian, Rao Junfeng, et al. Gate driving circuit for the all solid-state rectangular Marx generator[J]. IEEE Transactions on Plasma Science, 2019, 47(8): 4058-4063. doi: 10.1109/TPS.2019.2923327 [16] 饶俊峰, 汤鹏, 王永刚, 等. 基于谐振电路与脉冲变压器的高压脉冲源设计[J]. 强激光与粒子束, 2022, 34:045002 doi: 10.11884/HPLPB202234.210333Rao Junfeng, Tang Peng, Wang Yonggang, et al. Design of high voltage pulse generator based on resonant circuit and pulse transformer[J]. High Power Laser and Particle Beams, 2022, 34: 045002 doi: 10.11884/HPLPB202234.210333 [17] Zhou Ziwei, Li Zi, Rao Junfeng, et al. A high-performance drive circuit for all solid-state Marx generator[J]. IEEE Transactions on Plasma Science, 2016, 44(11): 2779-2784. doi: 10.1109/TPS.2016.2577704 [18] 葛劲伟, 姜松, 饶俊峰, 等. 全固态高压双极性方波脉冲叠加器的研制[J]. 高电压技术, 2019, 45(4):1305-1312Ge Jinwei, Jiang Song, Rao Junfeng, et al. Development of all-solid-state bipolar pulse adder with high voltage rectangular wave pulses output[J]. High Voltage Engineering, 2019, 45(4): 1305-1312 [19] Pressman A I, Billings K, Morey T. 开关电源设计[M]. 王志强, 肖文勋, 虞龙, 等译. 3版. 北京: 电子工业出版社, 2010Pressman A I, Billings K, Morey T. Switching power supply design[M]. Wang Zhiqiang, Xiao Wenxun, Yu Long, et al, trans. 3rd ed. Beijing: Publishing House of Electronics Industry, 2010 [20] 秦海鸿, 谢斯璇, 卜飞飞, 等. SiC MOSFET栅源电压评估及驱动回路参数优化设计方法[J]. 中国电机工程学报, 2022, 42(18):6823-6834Qin Haihong, Xie Sixuan, Bu Feifei, et al. Gate-source voltage evaluation and parameter optimized designed method of driving circuit for SiC MOSFET[J]. Proceedings of the CSEE, 2022, 42(18): 6823-6834