Influences of key parameters on width of output pulses by semiconductor opening switch

The influences of key parameters on the width of output pulses generated by a semiconductor opening switch (SOS) with p+-p-n-n+ structure were numerically studied using Silvaco TCAD tools, including diffusion depth of n+ region, effective cross-sectional area, external circuit parameters, etc. The simulation results show that the width of output pulses decrease with the increasing of the diffusion depth of n+ region, effective cross-sectional area and the resistance of external circuits. After a series of parameter optimizations, the output pulse with 4 ns width could be obtained.